Ohmic contacts to beta silicon carbide: Electrical and metallurgical characterizations

Posted on:1996-03-10

Degree:Ph.D

Type:Dissertation

University:California Institute of Technology

Candidate:Chen, Jen-Sue

Full Text:PDF

GTID:1468390014987552

Subject:Engineering

Abstract/Summary:

Thermally induced reactions between a sputter-deposited Re, Pt or Ta film and a single crystalline (001) Re does not react with SiC up to 1100A thin amorphous interlayer forms between Pt and SiC upon annealing at 400Ta reacts with SiC upon annealing at 900On the nitrogen-implanted...

Keywords/Search Tags:

Sic upon annealing

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