| majority of infrared sensors used for imaging arrays operating in the long-wavelength infrared wavelength region between eight and twelve microns are based on mercury cadmium telluride (HgCdTe). This material system is unable to satisfy all of the requirements that are imposed by modern applications. Structural difficulties due to poor uniformity, high defect densities, and weak bond strengths cause difficulties in manufacturing large infrared focal plane array cameras. As an alternative, quantum well infrared photodetectors (QWIPs) utilizing intersubband absorption between gallium arsenide (GaAs) wells and aluminum gallium arsenide (Al;Results of long wavelength infrared detector characterization are presented for detectors with barriers of gallium indium phosphide ;Device parameters including carrier mobility, carrier lifetime, photoconductive gain, thermal generation rate, and carrier diffusion length are calculated from the experimental data base developed in this study.;In summary, there is currently limited knowledge about QWIPs based on materials other than... |
