| In this research, the effects of pocket/halo implant on the MOSFETs are studied and modeled. A physical model for the partitioning of the gate-to-channel tunneling current to the source and the drain electrodes are derived. A charge based C-V model and a charge based I-V model are proposed and implemented. With the compact core of these models derived from the charge sheet model, completely new methods are proposed to analytically approximate the solution of the charge sheet model and to model the effects of quantum mechanics, retrograde well doping, poly-silicon depletion/accumulation, and carrier velocity saturation. These models are built on a purely symmetrical platform. Their implementations are verified with experimental data. |
