Electronic, optical, and transport properties of widegap II-VI semiconductors

Posted on:1998-04-07

Degree:Ph.D

Type:Dissertation

University:University of Florida

Candidate:Li, Jianzhong

Full Text:PDF

GTID:1460390014475988

Subject:Condensed matter physics

Abstract/Summary:

ifferent properties of three zincblende IIB-VIA compound semiconductors, of importance to the optoelectronic industry, are investigated. Firstly, the electronic structures of ZnS and CdTe are obtained by the empirical...

Keywords/Search Tags:

Electronic

Related items

1	Research And Implementation Of Electronic Map Technology Based On Electronic Paper
2	Electronic Structures Of In₂O₃（ZnO）_m Compounds And Their Electronic Transport Properties In Nanostructures
3	The Discussion On3D Electronic Map Application Mode
4	Electronic Properties Of Single-wall Carbon Nanotubes
5	ELECTRONIC TRANSPORT IN HIGH SPEED SEMICONDUCTOR ELECTRONIC AND OPTOELECTRONIC DEVICES
6	Research On The Production Of Yi Meng Red Tourism Electronic Map
7	Theoretical Study On Electronic Transport Properties Of Coupled-Quantum-Dot System Connectted To Four Terminals
8	Modulation Of The Electronic And Transport Properties Of Two-dimensional Quantum Systems
9	Stress Controls The Electronic Structure And Transport Properties Of GeP₃
10	The Error And Test For The Electronic Total Station Observations