| The integration of thin film optoelectronic devices enables complex optical and electronic combinations for advanced integrated optoelectronic systems. In many applications, which require interface between optics and electronics, photodetectors will be key elements. Therefore, the development of high performance photodetectors is important. The main objective of this dissertation is to develop thin film photodetectors for multispectral detection systems and high-speed optical interconnections. In this research, GaN thin film photodetectors, InGaAs thin film photodetectors, and a multispectral detection system using stacked thin film photodetectors are studied. The goals for this research are to develop new fabrication processes and to achieve high quality devices using GaN based materials for thin film photodetectors for ultraviolet detection, and high speed InGaAs photodetectors for high speed data transfer in telecommunication systems. In parallel, the construction of a measurement system for characterization of high-speed photodetectors is another goal. Finally 3D stacked thin film photodetectors for coarse wavelength division multiplexing and multispectral imaging are demonstrated. |
