| In this dissertation, fluxless transient liquid phase (TLP) bonding and solid state bonding between thermal expansion mismatch materials have been developed using Ag-In binary systems, pure Au, Ag, and Cu-Ag composite. In contrast to the conventional soldering process, fluxless bonding technique eliminates any corrosion and contamination problems caused by flux. Without flux, it is possible to fabricate high quality joints in large bonding areas where the flux is difficult to clean entirely. High quality joints are crucial to bonding thermal expansion mismatch materials since shear stress develops in the bonded pair. Stress concentration at voids in joints could increases breakage probability. In addition, intermetallic compound (IMC) formation between solder and underbump metallurgy (UBM) is essential for interconnect joint formation in conventional soldering process. However, the interface between IMC and solder is shown to be the weak interface that tends to break first during thermal cycling and drop tests. In our solid state bonding technique, there is no IMC involved in the bonding between Au to Au, Ag and Cu, and Ag and Au. All the reliability issues related to IMC or IMC growth is not our concern. To sum up, ductile bonding media, such as Ag or Au, and proper metallic layered structure are utilized in this research to produce high quality joints.;The research starts with developing a low temperature fluxless bonding process using electroplated Ag/In/Ag multilayer structures between Si chip and 304 stainless steel (304SS) substrate. Because the outer thin Ag layer effectively protects inner In layer from oxidation, In layer dissolves Ag layer and joints to Ag layer on the to-be-bonded Si chip when temperature reaches the reflow temperature of 166ºC. Joints consist of mainly Ag-rich Ag-In solid solution and Ag2In. Using this fluxless bonding technique, two 304SS substrates can be bonded together as well. From the high magnification SEM images taken at cross-section, there is no void or gap observed. The new bonding technique presented should be valuable in packaging high power electronic devices for high temperature operations. It should also be useful to bond two 304SS parts together at low bonding temperature of 190ºC.;Solid state bonding technique is then introduced to bond semiconductor chips, such as Si, to common substrates, such as Cu or alumina, using pure Ag and Au at a temperature matching the typical reflow temperature used in packaging industries, 260°C. In bonding, we realize the possibilities of solid state bonding of Au to Au, Au to Ag, and Ag to Cu. The idea comes from that Cu, Ag, and Au are located in the same column on periodic table, meaning that they have similar electronic configuration. They therefore have a better chance to share electrons. Also, the crystal lattice of Cu, Ag, and Au is the same, face-centered cubic. In the project, the detailed bonding mechanism is beyond the scope and here we determine the bonding by the experimental result. Ag is chosen as the joint material because of its superior physical properties. It has the highest electrical and thermal conductivities among all metals. It has low yield strength and is relatively ductile. Au is considered as well because its excellent ductility and fatigue resistance. Thus, the Ag or Au joints can deform to accommodate the shear strain caused by CTE mismatch between Si and Cu. Ag and Au have melting temperatures higher than 950°C, so the pure Ag or Au joints are expected to sustain in high operating temperature. The resulting joints do not contain any intermetallic compound. Thus, all reliability issues associated with intermetallic growth in commonly used solder joints do not exist anymore.;We finally move to the applications of solid state Ag bonding in flip chip interconnects design. At present, nearly all large-scale integrated circuit (IC) chips are packaged with flip-chip technology. This means that the chip is flipped over and the active (front) side is connected to the package using a large number of tiny solder joints, which provide mechanical support, electrical connection, and heat conduction. For chip-to-package level interconnects, a challenge is the severe mismatch in coefficient of thermal expansion (CTE) between chips and package substrates. The interconnect material thus needs to be compliant to deal with the CTE mismatch. At present, nearly all flip-chip interconnects in electronic industries are made of lead-free Sn-based solders. Soft solders are chosen due to high ductility, low yield strength, relatively low melting temperature, and reasonably good electrical and thermal conductivities.;In the never ending scaling down trend, more and more transistors are placed on the same Si chip size. This results in larger pin-out numbers and smaller solder joints.;According to International Technology Roadmap for Semiconductors (ITRS), by 2018, the pitch in flip-chip interconnects will become smaller than 70mum for high performance applications. Two problems occur. The first is increase in shear strain. The aspect ratio of flip-chip joints is constrained to 0.7 because it goes through molten phase in the reflow process. Therefore, smaller joints become shorter as well, resulting in larger shear strain arising from CTE mismatch between Si chips and package substrates. The second is increase in stress in the joints. Since intermetallic (IMC) thickness in the joint does not scale down with joint size, ratio of IMC thickness to joint height increases. This further enlarges the shear stress because the IMC does not deform as the soft solder does to accommodate CTE mismatch. In this research, the smallest dimension we achieve for Ag flip chip interconnect joint is 15mum in diameter. The ten advantages of Ag flip chip interconnect technology can be identified as (a) High electrical conductivity, 7.7 times of that of Pb-free solders, (b) High thermal conductivity, 5.2 times of that of Pb-free solders, (c) Completely fluxless, (d) No IMCs; all reliability issues associated with IMC and IMC growth do not exist, (e) Ag is very ductile and can manage CTE mismatch between chips and packages, (f) Ag joints can sustain at very high operation temperature because Ag has high melting temperature of 961°C, (g) No molten phase involved; the bump can better keep its shape and geometry, (h) No molten phase involved; bridging of adjacent bumps is less likely to occur, i. Aspect ratio of bumps can be made greater than 1, (j) The size of the bumps is only limited by the lithographic process.;Cu-Ag composite flip chip interconnect joints is developed based on three reasons. The first is lower material cost. The second is to strengthen the columns because the yield strength of Cu is 6 times of that of Ag. The third is to avoid possible Ag migration between Ag electrodes under voltage at temperatures above 250°C. This Cu-Ag composite design presents a solution in the path to the scale down roadmap. |
