| The microelectronics technology falls within the boundaries of that definition. Carbon nanotube (CNT) is a promising alternative material for the future nanoelectronics. Owing to the unique properties of CNTs and the maturity of CMOS IC technology, the integration of the two technologies will take advantages of both.; In this work, we demonstrate a new local silicon-gate carbon nanotube field-effect transistor (CNFET) by combining the in situ CNT growth technology and the SOI technology. The proposed CNFET structure has realized individual device operation, batch fabrication, low parasitics and better compatibility to the CMOS process at the same time. The configuration proposes a feasible approach to integrate the CNTs to CMOS platform for the first time, which makes CNT a step closer to application. The CNFETs show advanced DC characteristics. The ambipolar conductance and the scaling effect of the CNFETs have been analyzed based on the SB modulated conductance mechanism.; Investigation of radio-frequency (RF) characteristics of CNTs is essential for their application. RF transmission characteristics of the semiconducting and metallic CNTs are investigated to the frequency of 12 GHz using the full two-port S-parameter methodology for the first time. Without the effect of the parasitics, the signal transmission capability of the CNTs maintains at a constant level and shows no degeneration even at a high frequency of 12 GHz. An empirical RLC element model has been proposed to fit the RF response of the CNT array. Capacitive contact is reported between the CNTs and the metal electrodes. We also explore the high-frequency properties of the local silicon-gate CNFET as an active device by measuring its S parameters using a common-source configuration.; In addition, we demonstrate the application of CNT as via/contact filler to solve the problems of copper vias used in ICs nowadays. We have optimized the fabrication process for the CNT via integration. The CNT vias with larger current-density capacity have been obtained. |
