| Laser diode bars capable of producing over 100 Watts of continuous output power are finding increased use in military and industrial applications. These devices have a number of degradation mechanisms, ranging from the propagation of dislocations in the epitaxial layers used to create the p-n junction to oxidation of the mirror facets. In addition, degradation mechanisms caused by the packaging process are also common. In order to understand and quantify these degradation mechanisms, a spectrometer system and associated data analysis software have been developed that allow for in-depth analysis of each emitter in a laser diode bar. This system provides information related to facet defects, packaging-induced strain, thermal variations, and intra-cavity defects. The system has been used to quantify the relative strengths of various degradation mechanisms in a set of laser diode packages. |
