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Focal plane arrays based on Type-II indium arsenide/gallium antimonide superlattices

Posted on:2011-05-16Degree:Ph.DType:Dissertation
University:Northwestern UniversityCandidate:Delaunay, Pierre-YvesFull Text:PDF
GTID:1448390002969363Subject:Engineering
Abstract/Summary:
The goal of this work is to demonstrate that Type-II InAs/GaSb superlattices can perform high quality infrared imaging from the middle (MWIR) to the long (LWIR) wavelength infrared range. Theoretically, focal plane arrays (FPAs) based on this technology could be operated at higher temperatures, with lower dark currents than the leading HgCdTe platform. This effort will focus on the fabrication of MWIR and LWIR FPAs with performance similar to existing infrared cameras.;Some applications in the MWIR require fast, sensitive imagers able to sustain frame rates up to 100Hz. Such speed can only be achieved with photon detectors. However, these cameras need to be operated below 170K. Current research in this spectral band focuses on increasing the operating temperature of the FPA to a point where cooling could be performed with compact and reliable thermoelectric coolers. Type-II superlattice was used to demonstrate a camera that presented similar performance to HgCdTe and that could be operated up to room temperature. At 80K, the camera could detect temperature differences as low as 10 mK for an integration time shorter than 25 ms.;In the LWIR, the electric performance of Type-II photodiodes is mainly limited by surface leakage. Aggressive processing steps such as hybridization and underfill can increase the dark current of the devices by several orders of magnitude. New cleaning and passivation techniques were used to reduce the dark current of FPA diodes by two orders of magnitudes. The absorbing GaSb substrate was also removed to increase the quantum efficiency of the devices up to 90%. At 80K, a FPA with a 9.6 microm 50%-cutoff in responsivity was able to detect temperature differences as low as 19 mK, only limited by the performance of the testing system. The non-uniformity in responsivity reached 3.8% for a 98.2% operability.;The third generation of infrared cameras is based on multi-band imaging in order to improve the recognition capabilities of the imager. Preliminary detectors based on back to back diodes presented similar performance to single colors devices; the quantum efficiency was measured higher than 40% for both bands. Preliminary imaging results were demonstrated in the LWIR.
Keywords/Search Tags:Type-ii, LWIR, Imaging, Infrared
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