| We investigated the use of a lateral IMPATT diode built in 0.25mum CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. The measurements revealed excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.; In this research, a fully integrated transmitter at 77GHz is also presented in a 0.18mum standard CMOS technology. The system consists of a lateral IMPATT diode and a microstrip patch antenna. The antenna dimensions and the impedance seen by the IMPATT diode are optimized using the high frequency electromagnetic (EM) field solver, Sonnet, which is matched to the measured impedance of the diode.; In this work, the antenna is designed as a radiator and a resonator at the same time to minimize the required chip area. In addition, a study of the effect of different feed type and feed locations to match the IMPATT impedance is presented. Such a topology reduces parasitic losses, since no microstrip line is necessary to connect the oscillator to the antenna. At the same time, matching the IMPATT to the antenna is facilitated by integrating three diodes and three stubs along one of the radiating edges.; The output spectrum has no visible spurious components while the transmitted power is---62dBm at 76GHz. The measured frequency is within 1.3% of the simulated value and the measured transmitted power of the system had an offset frequency of -0.13% from the simulation results.; Because of the cost-efficiency and the robustness of standard CMOS manufacturing, this kind of monolithic integrated transmitter is well suited for use in millimeter-wave systems for various applications ranging from communications to automobile anti-collision radar system. |
