| Ion beams, which play an important role in modern scientific research and industrial applications, have been applied in many fields. A variety of ion sources have been invented and utilized in ion implanters and accelerators for ion implantation, ion beam deposition and ion beam analysis. Based on this, several representative works have been presented in this work as followings:(1) Negative cluster ion beams of the elements B, C, F, Al, and Si and of molecules such as BC and CN were extracted from the source of negative ion by cesium sputtering(SNICS) of a 2×1.7MV tandetron accelerator. Mass spectra with cluster size of 1-10 atoms/cluster were obtained by using a magnetic analyzer. The beam currents varied from5 nA to 200 μA depending on the element and cluster size. Magic number phenomenon occurred for some clusters such as C.(2) Few-layer graphene was synthesized on 25 μm-thick Cu foils by ion implantation using negative carbon cluster ions, followed by annealing at 950℃ in vacuum. Raman spectroscopy revealed the as-grown graphene was multilayer. The thickness of graphene increased with lager implanted C doses. And the non-linear effect caused by cluster ion beam was observed to reduce the amount of defects in graphene.(3) The uniformity measurement for a newly designed large-current ion implanter (LC-16 type) was implemented by implanting of 190-keV Ar ions into Si to a preset dose of 3×1016 atoms/cm2, followed by Rutherford backscattering spectroscopy (RBS) and sheet resistance measurement providing quantitative information on spatial distribution of dopants. The implant doses obtained from RBS at selected points at the sample gives a spatial uniformity within 5%, which are confirmed by the sheet resistance results.(4)The bilayer period of TiAlN/MoN multilayered hard coatings was estimated to be 90 nm by Rutherford backscattering spectroscopy (RBS) using 2.42 and 1.52 MeV Li2+ ion beams. Higher projectile energy can increase the detecting depth, while lower projectile energy and lager incident angle (tilt angle of samples) can improve the depth resolution.(5) Qualitative and quantitative analysis of impurities in Ruby bulks was realized by Non-RBS using 1.7 MeV protons. Both samples R1 and R2 contain 3 slight impurities:C, Cr and Pt. The concentrations of these impurities in R1 were C～3 at.%, Cr～0.7at.%, Pt～2.7 at.%, respectively, while C～3 at.%, Cr～0.7 at.%, Pt～2.7 at.% in R1.(6) Non-RBS measurements was implemented for quantitative detection of light elements in carbon-implanted ZnOS epilayers on sapphire substrates based on the resonance reaction C(p, p)C using 1.73 MeV protons.The diffusion of implanted carbon atoms in ZnOS epilayers when annealed by an excimer laser were also analyzed according to the intensities of carbon peaks. |
