| This paper is intended to provide an introduction of our work about the accelerator lab which based on a GIC4117 tandem. A multifunction ion beam system has been established based on a tandem accelerator, which including low and high energy (10-30keV,50-200keV, and 500-5000keV) implantation, RBS, PIXE, ERD, and NRA, Channeling analysis.The paper is divided into three parts. In the first part, an introduction of our work on the equipments which is concerned with accelerators is given, which including the following part:installation of negative ion implantation chamber, assembling of new 1.7MV accelerate tube, a computerized controlled Rutherford backscattering/channeling system's installment, which main components are a PC equipped with a multichannel analyzer data acquisition board, motion control hardware including the stepping motor controller and integrated circuit modules, and a LabVIEW programmed operating system with associated electronics.The second part deals with the various kinds ion beam analysis techniques including the fundamentals and experimental technique. This part focus on the fundamental physics of the interaction between incident ions and individual atoms in the solid provides the underlying science for ion beam analysis, then, and gives some introduction about the experimental details such as the ion beam analysis instrumentation, the Computer Simulation Codes.The third part covers the accelerator's applications, giving several examples of research on multiferroics films synthesized by ion implantation and analysis by RBS/Channeling. Several semiconductor films including CdS, GeSi, and GaN are implanted with metal ions. The structural and ferromagnetic properties are studied. The virgin GaN films have an excellent crystal quantity and in the implanted samples 60% disorder induced by ion implantation was recovered after annealing.
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