RFIC/MMIC Design Used In Phase Array Transmit/Receive Module

Radio Frequency Integrated Circuit (RFIC) and Mo nolithic Microwave IntegratedCircuit (MMIC) design used in phase array radar and communication syste m areinvestigated in this dissertation.Microstrip transmission line model in TSMC0.18μm CMOS technology wasfound using3-D electromagneticm field simulation method. Transmission line matchmethod was used in X band (8-12GHz) lower noise amplifier (LNA) and poweramplifier, the NF of the LNA is less than4.5dB, and small signal gain is above20dB.The P1dB output power of PA is high than18.3dBm and power add efficiency is15%.The SPDT switch is design, which insert loss is2.5dB and ports isolation is high than20dB. Transmit and receive module including two SPDTs, a LNA and a PA wasimplemented. A balun was designed in metal4and meral6layer coupling method witchreduce the loss and the chip area. The diode ring mixer contains4diode and2baluns,with17dBm LO driver power, the mixer’s frequency conversion loss is less than14.2dB, and the least conversion loss is12dB. The mixer can use in up frequencyconversion and down frequency conversion at the same time, which reduce the systemdesign。High isolation and low insertion loss performance CMOS T/R switch designtechnique was proposed and an S band high isolation and low insert loss switch wasdesigned, the switch isolation is39.27dB and insert loss is1.03dB. Finally wedemonstrate a SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achievedby the current-reused technique. Input matching ameliorated by Miller effect and simplematching network are used. Feedback technique produce a pole-zero, which canimprove the voltage gain flatness and extend bandwidth. The SiGe UWB LNA achievesS11below9dB and S22below10dB for frequencies from3.1to10.6GHz, S21above15dB and gain flatness undulate less than0.84dB, noise figure of2.32and3.55dB atthe UWB frequency range.An S-band and a C-band6-bit digital phase shifter are presented, which adopted byGaAs0.25μm technology. The S-band phase shifter was discussed particularly becauseof the same structure adopted in two phase shifters.180°、90°、45°、22.5°、11.25°、5.625°bit are designed. The series scatter restrain and the phase shifter error debasemethod are also discussed. The relative phase shift varies from0to360at the step of5.625°. The S-band phase shifter test result shows Over the design band of2.1–2.7GHz, the minimum rms phase error is1.13°, and a low insertion loss of less than6.3dB, ofwhich amplitude fluctuate less than0.4dB, the input and output scatter parameter lessthan-10dB at all conditions. The C-band phase shifter achieves less than6.4dB ofinsertion loss, with an rms phase error of1.73°. The relative phase shift varies from0to360in step of5.625°. The phase shifter the input and output VSWR are less than1.6atall conditions. The chip size is4mm×1.95mm.The symmetrical property GaN high-electron mobility transistor (HEMT) as acontrol transistor has widely investigated, and the equivalent model is proposed. Themodel was verified with experimental data taken on test HEMT devices. The on-stateresistance and the off-state capacitance are measured. The measurement data show quitegood agreement with the simulation results, demonstrating the effectiveness of theproposed model.The passive device model was research in GaN MMIC technology, andthe capacitance, inductance, microstrip line and the grounding hole model were found.At last, the TTL Voltage Convertion circuit was designed using E/D mode in GaNMMIC technology, which transmit the TTL voltage into0V and-4V, this can realizedigital voltage control exhaust microwave device.