Theoretical Analysis And Fabrication Research Of InP-based Microring Resonator

21st century society is a more informatization society, and its goal is to realize3T: Tbit single-chip storage capacity, Tbit/s information transmission speed, T/s processing speed of a computer. The conventional electrical industry can’t easily realize3T. With the photon technology, we can overcome every electrical bottleneck. As a basic material of photon technology, indium phosphide with a direct bandgap has intrinsic advantages in realizing active characteristics. InP-based microring resonator with two advantages of no face-coating and having different nonlinear features like semiconductor optical amplifier(SOA), are the ideal element devices for realizing all optical signal processing, optical computing, optical integration. Compared with extensive researches which are executed in foreign country, few research of InP-based microring resonator has investigated in our country.In these works, we theoretically analyzed the multistability and multi-bistability of coupled active microring, including the serially-connected and cascaded-connected topology structures, with bifurcation theory and continuation method. Different topology structures of InP-based active microring are designed and manufactured. We constructed the testing platform of active microring, packaged the manufactured devices, and measured related devices. The research progresses are given as follows:(1) We theoretically analyzed the stable characteristics of cascaded-connected active microring. A theoretical model is deduced, we have analyzed the multistability and multi-bistability characteristic of the coupled active microring(CAM) based on Adam’s mean-field model. The bifurcation theory and the continuation method allow us to solve the normal parametric differential equations of the CAM. Novel multi-bistability including inverted double-S-shaped multi-bistability, hat-shaped multi-bistability, knife bistability, S-shaped butterfly multi-bistability are observed in the CAM. Besides the novel multi-bistability, we have demonstrated inverted double-S-shaped tristability, woodpecker-shaped tristability, duke-shaped tristability, grasshopper-shaped tristability, pseudo-quadristability in the CAM. Finally, the stability control of the CAM is also analyzed. The switching thresholds of the multi-bistability and multi-stability can be adjusted by changing the biased optical power. The types of stability can also be changed via changing the injected current of each active microring, which benefits the increasing of error tolerations and the decreasing of fabrication difficulties in actual fabrication of this CAM structure.(2) The stability features of serially-connected active microring are investigated. With the analysis of different coupling coefficients infulence to optical stabilities, only the multi-bistability which is constituted with two anti-clockwise hysteresis loops is observed on drop port. Considering the input signal wavelength influence of the stabilities, we can observe the pseudo-quadristability which make this serially-connected active microring have the potential for storing2bit informations. The change of each coupling coefficient can change the branch number and jumping threshold of this multi-bistabilites, but not the type. In addition, we found that the injected current also can change the branch number and the jumping threshold.(3) Difference topology structures of inP-based active microring which includes different-coupling-coefficients single microring with a40GHz FSR, serially-connected microring, parallel-connected microring, and two-order integrator are designed.(4) The designed InP-based microring devices are manufactured. We completed the total fabrication follows which from the initial wafer wash to N-type contact fabrication. Sepically, the techonology parameters for etching of silica mask are experimentally analyzed with magnetically enhanced reactive ion etching(MERIE). A810vertical angle is obtained with a gas ratio of70sccm CHF3and lsccm O2, and80W radio frequency(RF) power. We verticated the ecthing parameters with the following etch with ion coupled plasma(ICP). We have fabricated40GHz single microring with different coupling gap, cascaded-connected active microring, serially-connected active microring, and two-order integrator.(5) We packaged the chip, and constructed the testing platform of active device.The optical and electrical features of straight active waveguides with the width of2and2.5um,40GHz microring with a width of2pm are both exprimentally analyzed. The lasing phenomenon are observed in2.5μm straight waveguide. Only the amplied spontionus emission are obviously observed, which is due to the part lift-off of the contact at the top of bend waveguide. This part lift-off is due to the lateral wet etching of the active microring which induced some lateral gear cutting.