The Investigation Of Ions Implanted In Soi And Soi Based Quasi3D Photonic Crystal

SOI (silicon-on-insulator) is one kind of new material which appeared following the great success of bulk Si and Si integrated circuits. Its unique advantages enable SOI to break the confinement of bulk Si and Si integrated circuits. SOI material is characterized by high velocity, low voltage, low power consumption and resistance to high temperatures. It is the key technique adopted in resolving the crisis posed by very large-scale integrated circuits power dissipation. Together with SOI technique, microelectronic technology and power electronic technology, the SOI power integrated circuits can be widely applied in the fields of display driver, power management, automotive electronics, military hardware and aerospace. Therefore, SOI technology is praised as a Si integrated circuits technique in the21st century.Photonic crystal is a new field developed in the last twenty years, which shows intriguing application prospect in the confining of light propagation and the optical communication. A new integrated optical system with the merits of sub miniaturization and high integration can be realized by using photonic crystal, which will bring a new hope in the future development and application of the integrated optics. The quasi3D (three-dimensional) photonic crystal slab is a platform of the future optical integrated circuits. Researches on the quasi3D photonic crystal slabs have been transferred from pure theory to design, fabrication and measurement of photonic crystal devices in the near-infrared region.As one of the important technologies of making semiconductor devices and integrated circuits, ion-implantation has been widely used in such materials as metals, semiconductors and dielectrics, as well as in manufacturing many other devices due to its special use in doping, formation of dielectric isolation layer and interface of super crystal lattice. It is one of the most important methods for material modification which offers accurate control of both penetration depth and doping element by means of a particular species, as well as the energy of the ions, without being limited by the fixed temperature of substrate materials. Its application in semiconductor technology has brought a new era to the production of very large-scale integrated circuits.In this paper, Rutherford backscattering/channeling (RBS/C) technique is used to study the depth distributions of impurities and the crystal damage and the annealing behavior of SOI in the presence of rare earth (RE) ions, erbium (Er), neodymium (Nd) and ytterbium (Yb). And the photoluminescence (PL) of Er implanted in SOI samples is measured. The energy band gap and the transmission of light waveguide of SOI based quasi3D photonic crystal slabs are investigated.The range distributions for Er, Nd and Yb ions implanted in SOI with different energies and doses are obtained by using2.1MeV H2+Rutherford backscattering spectrometry (RBS). The mean projected range Rp and the range straggling⊿Rp, performed by the surface energy approximation, are compared with that calculated from SRIM (The Stopping and Range of Ions in Matter)2010software which is based on a Monte-Karlo method. A good agreement of the Rp data is observed, and there is a striking difference between the experimental results of⊿Rp and that of SRIM2010. It is supposed that the mean projected range Rp of RE ions implanted in SOI can be simulated well by the SRIM software, and it is too large for the data of the range straggling AR simulated by SRIM. It is concluded that there is no necessity to modify the universal inter-atomic potential that is used to describe the nuclear stopping for rare earth ions interacting with Si. Other factors need to be considered, such as the radiation enhanced diffusion in implantation process and the gurgitation of state density of charge as ions impenetrate target, because the width of range distribution can be increased by the radiation enhanced diffusion and the gurgitation of state density of charge, which are not taken into account in SRIM program.According to the experimental principle presented by Seijiro Furukawa et al, the lateral deviations⊿Xf for Er and Nd ions implanted in SOI are calculated with the data of⊿Rp of Er and Nd ions implanted in SOI with different tilted angles obtained by using RBS technique. The results show that the⊿XL values measured by experiment conform with those from SRIM2010.The distributions of crystal damage induced by implantations of Er ions with different energies and doses in SOI are studied by using RBS/C with multiple scattering models. The results show that the degree of crystal damage is mainly impacted by the implanting doses. The higher the implant dose, the heavier the crystal damage. Both the ranges of damaged layers and the degree of crystal damage are impacted by the implanting energies. The higher the energy, the heavier the crystal damage, and the wider the ranges of damaged layer.The annealing behavior of the SOI samples implanted with Er ions is investigated by RBS/C technology. It is found that the crystal damage induced by implantations of Er ions in SOI samples is almost removed after annealed at900℃in N2atmosphere, accompanied by segregation of a mass of Er atoms to the surface. It is observed that the segregation of a part of Er atoms to the surface is prevented by the O atoms transmitted to the place where Er is located from SiO2layer in SOI because of the active property of physics and chemistry of Er, as well as the erbium’s affinity for oxygen. The annealing behavior of the SOI samples co-implanted with Er and O ions is investigated by RBS/C technology. The experimental result shows that the out-diffusion of Er atoms to the surface of SOI after annealed in high temperature is inhibited in that case. And it is also found that the segregation of a mass of Er atoms to the surface is prevented by means of annealed in O and N gas atmospheres successively in high temperature.The PL of Er and O co-implanted in SOI samples is measured after annealing in high temperature. The characteristic PL spectra of Er3+at1.54μm wavelength by its antra-4f transition in low temperature. But temperature-quenching effect is evident, the PL is very low at100K and can’t be observed at room temperature. The PL spectra of the SOI sample implanted with Er ions after annealing in O and N gas atmospheres successively in high temperature is obtained. It is discovered that there is a high efficiency PL emission at near infrared wavelength (810nm-925nm), and the temperature-quenching effect is not strong, there is still an intense emission at room temperature.The SOI based quasi3D photonic crystal slabs and Wl, W3waveguides are fabricated by optical lithography and electron beam lithography with ICP (Inductively Coupled Plasma) etching technique. A system measuring the light transmission spectrum of photonic crystal is built to measure the light transmission spectra of the SOI based quasi3D photonic crystal slabs and W1, W3waveguides. The experimental results are compared with the data calculated by3D-FDTD simulation software. It will lay an experimental foundation for the fabrication of applied photonic crystal devices in the future.