Investigation Of Optical And Structural Properties Of ZnO And Other Crystals Implanted With Ag,Si And Rare Earth Ions

The direct band-gap semiconductor,ZnO is an outstanding material for numerous technological applications in optoelectronics due to its features in optical,electronic and physical mechanism.TeO₂ crystals are attractive materials in potential applications in optical switches and optical amplifiers owing to the high acoustic-optical threshold in the<110>directions and（001）planes.Among the laser host material families,rare-earth-doped vanadate crystals have received significant attentions for potential applications in solid-state lasers because of their excellent features,i.e.,low lasing threshold and high slope efficiency.Among these,YVO₄ and YbVO₄ are remarkable materials in highly efficient LD-pumped solid-state lasers.In present work of this thesis,the Tm and Yb ions were co-implanted in ZnO at energies of keV.TeO₂ were were implanted with keV Nd and Ag ions.YbVO₄ as well as HoYb:YVO₄ were implanted with MeV Si and C ions,respectively.Both the structural and optical properties were investigated using SRIM simulation,X-ray diffractiontechniques（XRD）,Ramanspectra（Raman）,Rutherford backscattering/channeling spectrometry（RBS/C）,prism-coupling method and photoluminescence（PL）measurement.The main results are given as follows.ZnO crystals were implanted with Tm and Yb ions at energies of keV and total doses of¹0¹⁵ ions/cm².Some samples were annealed at 800℃and 1000℃for 30min,respectively.The damage and structural properties were characterized by RBS/C and XRD measurements.Both the near-infrared（1415nm-1450nm）and upconversion（484 nm and 673 nm）luminescence emissions were demonstrated under excitation with 532 nm and 980 nm lasers,respectively.TeO₂ crystals were implanted with 290 keV Ag ions(dose of 3.0×10¹⁵ cm^-2)and360 keV Nd ions(dose of 2.0×10¹⁵ cm^-2)followed by thermal treatment at 400℃in oxygen ambient.The near-infrared fluorescence emissions were recorded under excitation with 532 nm laser.The results showed that the PL performance of Nd³⁺could be effectively improved in Ag/Nd co-implanted TeO₂.YbVO₄ crystals were implanted with 3.0 MeV Si ions at room temperature.The n_eff（o）-increased waveguide structures were measured by the prism coupling method at wavelength of 633 nm.The near-infrared emission fluorescences were measured under excitation with 335 nm and 930 nm lasers,respectively.The crystalline qualities of all samples were also analyzed by HRXRD examination.The vanadate laser crystals HoYb:YbVO₄ were implanted with 6.0 MeV C ions at doses of 5.0×10¹³-1.35×10¹⁵ cm^-2.The prism-coupling method was carried out to characterize the waveguides formed by 6.0 MeV C-implanted HoYb:YbVO₄.Both the fluorescence and upconversion luminescence emission were investigated under excitation with 410 nm 980 nm lasers,respectively.