Study On Control Technology Of Nano Positioning Displacement Stage

With the rapid development of MEMS, techniques to produce perfect patterns and microstructures need to be researched. Electron beam lithography (EBL) is considered as the best technique to manufacture patterns with high resolution, and it is generally used to super microfabrication and precise masks making with resolution 0.1～0.5μm. Electron beam(EB) can be focused to less than 2 nm in lab. The beam used broadly now has a long journey, high accelerated voltage and high energy. The proximity effect which consists in the lithography process of high energy electron beam to the resist film leads to a much larger area than the designed figures. The resolution of exposure system is reduced. Scanning Tunneling Microscope(STM) reduces the proximity effect by the narrow beam and the short distance between the probe and sample. Super precise exposure patterns can be obtained and masks can be made, which provide a new method for the micro fabrication to enhance the exposure resolution.Because there is no study on the deflexion of the STM beam currently, the exposure must be realized by a precision stage with super-high resolution. The fix accuracy of mechanical displacement device is not exactly precise due to its clearance, friction and crawl. The best stage which can achieve nanometer precision is driven by piezoelectric ceramics. But the hysteresis, nonlinearity and creep of the ceramics reduce the positioning precision and dynamic response speed. The displacement error is conducted. To achieve high movement precision and resolution, the hysteresis nonlinear mechanism of piezoelectric ceramics should be studied, and the relative control policy must be designed. The novel precise positioning techniques about micro-displacement stage have been investigated in this thesis. Based on the...