Gaas, Of Gasb-based Material Growth And Device Research,

compound semiconductors materials have been used widely in microwave, high-speed electronic, hall devices, and opto-electronic devices and circuits due to their unique band structure and properties. GaAs is the most technologically important and the most studied compound semiconductors material. And GaSb is the preferred material of mid-infrared opto-electronic devices. This thesis is concerned with molecular beam epitaxy(MBE) of antimony-based semiconductors and device application of the arsenide-based III-V semiconductors. The MBE of antimony-based mid-wave infrared multiple quantum wells, AlGainP/GaAs HBT, and n-GaAs ohmic contact are studied in the thesis. In addition, we develop an instrument to measure the specific contact resistance of ohmic contacts. Major results of the thesis are abstracted as following:1) Some parameters of InGaSb, AlGaSb, and InGaAsSb are calculated. The In0.35Ga0.65Sb/In0.35Ga0.65As0.1Sb0.9/In0.35Ga0.65Sb/Al0.35Ga0.65Sb type multiple quantum wells for mid-wave infrared diode lasers is proposed, and the band structures of the quantum wells are described systematically.2) In0.35Ga0.65Sb/In0.35Ga0.65As0.1Sb0.9/In0.35Ga0.65Sb/Al0.35Ga0.65Sb type multiple quantum wells are grown by MBE and designed to probe the effect of In0.35Ga0.65As0.1Sb0.9 layer thickness and In0.35Ga0.65Sb layer thickness on the photoluminescence spectroscopy (PL) properties. As the In0.35Ga0.65As0.3Sb0.7 layer thickness is increased, a spectral red shift of the PL peaks accompanied by a significant decrease in intensity is observed. AS the In0.35Ga0.65Sb layer thickness is increased, we observe a spectral red shift of the PL peaks accompanied by a slight decrease in intensity. This new quantum well structure is a quasi type quantum well3) The processing technology of AlGalnP/GaAs HBT is discussed, and the effects of base/collector junction structure to the properties of HBT are also studied theoretically and experimentally. Three large-scale AlGalnP/GaAs HBTs with different base/collector junction structure have been fabricated. The electronrepelling effect of the conduction-band spike formed at the collector heterojunction was obtained at the transistors with a p+-GaAs/N-AlGaInP base/collector junction structure. To overcome this effect a thin i-GaAs layer was inserted between the base and the AlGalnP wide-gap collector. Transistors with a p+-GaAs/i-GaAs/N-AlGaInP base/collector junction structure show excellent current/voltage characteristics.4) An instrument to measure the specific contact resistance (pc) of ohmic contacts is developed. The instrument can make the measurement of pc in six methods, and each method has a program to match.5) AuGeNi/Au Ohmic contact to n-GaAs with Si-doped by ion implantation have been systematically investigated as a function of implant energy and dose. Low specific contact resistance (pc) values of around are obtained for all samples treated by RTA. We observe no p variations with implant energy and dose.