The Study Of Gasb-Based Laser Cavity Facet Film

With one incident light perpendicular to the interface of GaSb and air, when the cleavage cavity of the semiconductor laser was uncoated, it can be obtained from the reflectance formula that about70%of the laser energy has not been effectively utilized because of scattering.In order to improve the optical performance of GaSb-based laser cavity facet, antireflection film and high-reflective film were respectively designed on the front and the back cavity facet through various design of film design software. Ta2O5was chosen as the materials of single layer antireflection film; Al2O3, Ge and SiO2were selected as the appropriate materials of high-reflective film by comparing a variety of thin film materials and using optical thin film design theory. In the process of the preparation, the antireflection film and the high-reflective film were successfully prepared by the ion beam assisted deposition technique. The spectrum curves show that:at2μm, the reflectivity of the antireflection film and the high-reflective film are2.582%and99.05%. And then test the surface morphology and roughness of these films which have better spectral characteristics. All the test results can meet the required technical parameters of this paper.