Silicon In H +, Of He ~ + Ion Implantation-induced Physical Effects And Soi Accelerometer Development,

SOT technology develops rapidly with the development of low voltage/power circuits and was considered as the technology of the future microelectronics. The work in this thesis focused on 3 aspects: first, to research the effects during ion implantation and annealing in Smart-Cut SOI fabrication processes; second, to fabricate Smart-Cut SOT with new equipments; third, to design the high G accelerometer with SOI material. The evolution and redistribution of defects and hydrogen atoms during hydrogen implantation and annealing were studied systematically. It was found that the density of defect increased with the increase of annealing temperature from 200-4000C. The hydrogen in silicon substrate escaped during annealing and the distribution kept the same. In the samples implanted with B~, the temperature of exfoliation decreased from 450擟 to 2500C. The research results help us to improve the quality of Smart-Cut SOT material, and to understand the process of Smart-Cut in silicon. The exfoliation and blistering on the surface induced by hydrogen and helium co-implantation were studied. The reason why co-implantation could reduce the total implantation dose was studied carefully. And the equation of total implantation was given. At the same time, the evolution of defect during annealing and implantation was analyzed and the phenomenon that the helium moved to the position of hydrogen during annealing was found. The results provided a new way to fabricate Smart-Cut SOT material. It reduced the total implantation dose and the implantation time. Hydrogen was implanted in silicon with Ion-beam-enhanced-deposition equipment to fabricate Smart-Cut SOT material for the first time. This technology reduced the implantation time and increased the yield of SOT material. Such equipment could fabricate wafers with a diameter of 8 inches. Although the quality of this kind of Smart-Cut SOT is not so good before the annealing at 11 000C (to enhance the bonding of the two wafer), the quality of the SOT material was improved greatly after the annealing. This technology is similar to the technology named plasma immersion ion implantation (Pill). It is a technology that is worthy of researching. This technology could be employed in the aspects, which don抰 mind the pollution of the impurity, such as MEMS. The strain in Smart-Cut SOT material was analyzed by I{RXRD. It is found that the strain was small before the annealing to enhance the bonding and it increased during the annealing. The magnitude of the strain was in the range of i04 ~~10g~ The reason of the increase of the strain was analyzed. To decrease the strain in Smart-Cut reason of the increase of the strain was analyzed. To decrease the strain in Smart-Cut SOT material, it is necessary to decrease the annealing time. Based on SOT material, high El accelerometer was designed. The strain in the cantilever was analyzed by ANSYS program; the parameter in process of the accelerometer was optimized. The devices are in processing.