| Liquid crystal display ( LCD ) has been currently the main stream of the flat panel displays (FPDs) , and a-Si TFT-LCD is the dominant one in this field.a-Si TFT-LCD has many merits, such as high definition display, full color, meeting the demands on video, high display performance and so on. But its display performances are inferior to that of CRT, and the acquirement for a a-Si TFT-LCD with high performance must base on the optimum design for TFT array and the optimizing choice for the array technology. The people have done a large research works for them and made great progress, but there still are many drawbacks and difficult points needed to be solved. In this thesis, the rational and practicable solving schemes are put forward for the relevant difficult points that are investigated theoretically and experimentally in the array design and preparation of TFT-LCD with high performance.a-Si TFT with the high performance is required in TFT-LCD with high quality. The investigation for the static characteristics of a-Si TFT is particularly useful for designing, preparing and applying these devices. At present, the models that have been presented have the following questions, the complex simulation process and considering insufficiently to the parameters affecting the static eluuacienslics of a-S: TFT. In this thesis, A simplified theory model of the static characteristics of a-Si TFT is presented and it solves the above drawbacks and agrees with the results of experiments.The optimum design of the array board of a-Si TFT-LCD is the premise and guarantee for TFT-LCD with high quality. Based on the optimum design for the array of 3inch and 10.4inch.a-Si TFT-LCD, we have successfully prepared the 3 inch black-white TFT-LCD panel with the pixels of 200x192. In the meantime, we present the optimum design scheme of the 10.4inch color VGA TFT-LCD panel. In addition, to solve the question of the low brightness in the large screen, high definition TFT-LCDs, the design of a new type store capacity and black matrix has been put forward and remarkably improves the aperture ratio. This design may give a practicable solving scheme for keeping and improving the brightness under high definition.Because of the limitation of preparation technology of TFT array, they are the difficult points to choose the proper preparation technology and the good technologycontrollability of ITO films with the fine performance. They are also urgent solving questions during TFT array process. In this thesis, we firstly investigate the relations between the optical and electrical of ITO films and the technology parameters, and solve the following questions: the preparation technology of ITO films not suitable for the preparation technology of TFT array and the poor technology controllability. At last, the conditions of prepared technology of ITO films with high quality, the stable properties and annealing technology free are decided in TFT array process.In addition, to solve the demands on the gate materials of lower resistivity for the large screen and high definition TFT-LCD, the gate electrode structure with the Al double layer was presented in this thesis. It avoids the small hill on the Al film and Its resistivity is in a range of 10~25 u Q ?cm, satisfying the demands on the delay time of gate line for TFT-LCD with high definition. These results are the essential conditions to research and prepare the large screen and high definition TFT-LCD by ourselves in the future.
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