The Fabrication And Characterization Of ZnO-Based Films And UV Photodetectors Via Pt Nanoparticle Enhanced

ZnO is a direct band gap semiconductor with wurtzite structure. Via doping the element of magnesium we obtained the MgZnO semiconductor, which the band gap energy of it can be controlled from 3.3 eV to 7.8 eV at the room temperature. Due to its widely distributed,multi-preparation methods and environmentally friendly, people are increasingly focus on the research of this materials in recent years.In this paper, ZnO films and MgZnO alloy films were prepared by radio-frequency magnetron sputtering technique. And the metal-semiconductor-metal structured ultraviolet detectors were prepared on the thin films. We also discussed the quality, surface morphology and optical property of ZnO and MgZnO films,and the absorption of the films and the responsivity of detectors both enhanced largely by the metal surface plasmons. Furthermore,the metal nanoparticles also enhanced the double-layer detectors, through this process we have further studied the theory of the surface plasmons.