Study Of Some Basic Problems Of Soft X-ray Multilayer

In this paper we report the results of surface roughness, interface diffusion, crystal, chemical, and EUV characterization of Mo/Si multilayers grown by ion beam sputtering deposition system. Our goals are to optimize the deposition parameters. We make a series of single Mo or Si layers and multilayers using various deposition parameters, characterize them with atomic force microscope (AFM), two types of x梤ay diffraction (XRD) and XPS. We find that Mo and Si film can avoid columnar條ike growth once the beam voltage exceeds a threshold, between the interdiffusion of Mo梠n桽i and Sj梠nMo, Mo梠n桽i interface diffusion contributes more to the decrease of reflectivity, the high梐ngle 6?0 XRD spectra show that the Mo and Si layers are polycrystalline with (110) and (400) texture, and XPS results indicate all the Mo and Si layers have oxide on the surface. According to the upper analysis, we optimize the deposition parameters successfully, and improve the normal梚ncidence reflectance of Mo/Si multiplayer up to 60% at l3nm.