High-Power IPM Drive Protection Chip Design

As the core processing unit in the power electronics industry, the power device plays an important role in the national economy and people's life. Nowadays, among various power devices, the application of IGBT (Insulated Gate Bipolar Transistor) covers the power range almost from dozens of watts to megawatts due to its superior performance. As the product of IGBT's futher development, IPM (Intelligent Power Module) integrates the IGBT chip with drive and protection circuit. It reduces the volume, mess and the influence of the parasitic parameter, and improves the integration and reliability. So it is an important future development direction for power devices.Aiming at the characteristics of IGBT driver and protection circuit in IPM, this paper designs a high-power IPM driver and protection integrated circuit based on detailed analyses,which includes driver module, protection module and assistant function module. In driver module, aiming at the characteristics of the IGBT switching process, three types of driving models are designed, and flexible in configuration through the ports; Protection module contains the VCE saturation detection, the di/dt detection based on parasitic inductance LeE and the shunt detection method aiming at the IPM module Features, it can implement soft switching after a failure is detected. In order to guarantee the normal operation of the driver and protection circuit, this paper also design an assistant function module, which includes LDO,oscillator and so on. Driver and protection integrated circuit can be suitable for high-power IPM module also can be applied to general IGBT module.This driver and protection circuit is based on CSMC 0.25?m process design and verified by Candence spectre simulation which shows that the circuit has a good driving function and reliable protection.