High Power IGBT Universal Driver Design

From the advent of IGBT, its development is extremely rapid and application scope is gradually expanded, it has been spread over many aspects of life, so it has a deeper significance for the research of IGBT driver. Currently on the market most of the high power IGBT Driver is for a fixed manufacture of IGBT module, so are less common, small part can apply to a certain range of power IGBT devices, but the driver performance in general, and the price is generally high. Therefore, the design of a with high compatibility and drive IGBT driver with excellent performance for the power electronics industry has very important significance.This paper analyzes the structure of IGBT and its working principle, and deeply studies the working characteristics of IGBT, including its switching characteristics and Miller effect. Hold effect. Then the saber simulation software of Infineon company model for FZ1500R33HE3 IGBT were modeling and analysis, and provide with the IGBT actual parameters and user manual of waveforms are compared. It provides a basis for the design of the driving circuit and the protection circuit.According to the requirements of IGBT for driving circuit, and aiming at the shortcomings of the current IGBT driver module, the function of the driver’s fault feedback function and the driver parameter configuration are designed. In order to control the IGBT more accurately and improve the compatibility of the driver, the design scheme of the drive circuit with variable gate resistance is designed.The failure reasons and protective measures of IGBT are analyzed, and the traditional protection method is compared. The IGBT driver can automatically detect the type of failure of the device, and take different measures to protect the device. Finally, according to the design scheme, the production of the IGBT driver is completed, and the theory is verified in the experimental circuit.