| With the explosive growth of information processing,traditional microelectronic devices represented by CMOS are approaching their technical limits as their size continues to shrink.Resistive random-access memory（RRAM）,also known as memristor,has the advantages of simple structure,fast read/write speed,high storage density,and good size scalability,and is one of the representatives of the next generation non-volatile memory.The resistive switching performance of RRAM is closely related to its preparation methods,and common methods include magnetron sputtering,sol-gel method,hydrothermal synthesis,and atomic layer deposition.Among them,hydrothermal synthesis has the advantages of low cost,simple operation,and mild reaction conditions,and has received wide attention.In this paper,TiO2nanowire memristors were prepared by hydrothermal synthesis,and Zr O2/TiO2heterostructure memristors were prepared by spin-coating a layer of Zr O2thin film,and the performance of the two devices was studied.The main work of this paper is as follows:1.A TiO2 nanowire film and an Ag/TiO2/FTO memristor were prepared.TiO2nanowire film was grown by hydrothermal method and an Ag/TiO2/FTO memristor was fabricated.The device exhibited unipolar non-volatile characteristics with a switching ratio of about 3,cycle endurance of 5000 times,and retention characteristics of over 1000s.Finally,the I-V curve was fitted and analyzed,and the device conduction mechanism was consistent with the SCLC model.The resistive switching behavior was determined to be dominated by an oxygen vacancy-based conductive filament model.2.An Ag/Zr O2/TiO2/FTO heterostructure memristor was fabricated.Based on a TiO2nanowire film,an Ag/Zr O2/TiO2/FTO heterostructure memristor was prepared by spin-coating a layer of Zr O2thin film,resulting in improved stability and endurance of up to 100,000 cycles and retention characteristics of over 98,000s,indicating significantly improved performance.The conduction mechanism of the device was found to still conform to the SCLC model through I-V curve fitting analysis.Finally,a resistive switching physical model was established,which showed that the resistive switching behavior was jointly determined by Ag metal conductive filaments and oxygen vacancy conductive filaments.3.Two types of devices were simulated to exhibit biological synaptic plasticity.Different DC voltage scanning and pulse stimulation test schemes were used to achieve STP,LTP,nonlinear transmission characteristics,EPSC,"learning experience"behavior,PPF,PPD,and PPF-to-PPD transition and other biological responses.Through comparison,it was found that the Ag/Zr O2/TiO2/FTO device had a stronger ability to simulate biological synaptic plasticity. |
