AlInGaAs Multi-quantum Well Transceivers With Electro-optical Modulation Characteristics For Free-space Optical Communication And Sensing

Infrared optical communication is a wireless communication technology that uses the infrared light band for data transmission.It is widely used in remote control,infrared remote sensing,infrared communication and other fields.Among them,the 1550 nm band is considered to be an important band for infrared optical communication because of its low atmospheric attenuation and high transmission capacity.Conventional optical communication involves sending an optical signal from the transmitter and transmitting it through optical fibre or space to the receiver for decoding and processing.Reverse optical communication,on the other hand,is the sending of an optical signal from the receiving end,which is transmitted via optical fibre or space to the sending end.Highly integrated transceiver terminals are in strong demand in infrared optical communication to realise the advantages of miniaturisation,high rate transmission,multi-functional integration and energy saving.This is of great importance in promoting the expansion of the field of application of infrared optical communication and providing efficient and reliable communication solutions.By realising miniaturisation,high speed transmission,multi-functional integration and energy saving,highly integrated transceiver terminals can drive the expansion of the application field of infrared optical communication and provide more efficient and reliable communication solutions for various application scenarios.In this paper,an AlInGaAs multi-quantum well transceiver with electro-optical modulation characteristics is proposed for free-space optical communication and sensing in the infrared.In this paper,the photonic integrated chip was successfully fabricated on AlInGaAs multi-quantum well material on In P substrate,and its optoelectronic properties,infrared optical communication performance and optical sensing performance were investigated.The design scheme,processing process and fabrication flow of the AlInGaAs multi-quantum well transceiver photonic integrated chip were introduced,and the morphological characterization of the fabricated photonic integrated chip was carried out.The photonic integrated chip is prepared using standard semiconductor manufacturing processes,including key processes such as photolithography,etching,metal vapour deposition and stripping.The photonic integrated chip was characterised using optical microscopy,electron microscopy,atomic force microscopy and a bench scale,and the resulting chip was of good processing quality and conformed to the design.The photonic integrated chip was further tested for its optoelectronic properties,including current-voltage,capacitance-voltage,electroluminescence and detection spectrum.The tests show that the photonic integrated chip has low turn-on voltage,fast current response and good optoelectronic conversion characteristics.The photonic integrated chip is capable of electro-optical modulation of broad-spectrum optical signals in the near-infrared region.In addition to the inverse modulation of infrared optical communication,the photonic integrated chip is also used to realise the integrated transceiver function of near-infrared optical communication that can detect both environmental changes and electrical signals to modulate optical signals,and to conduct free-space optical communication experiments based on asymmetric optical chains with inverse modulation.The photonic integrated chip studied in this paper provides an integrated transceiver technology solution with electro-optical modulation,which helps to miniaturise and integrate infrared optical communication terminal devices.The electro-optical modulation and environment-aware photonic integrated chip has a very wide range of application prospects for optical sensing,opto-electronic computing,medical diagnosis,security monitoring and other fields.