Research On Characteristics Of Homogeneous Integrated Photonic Chip Based On AlInGaAs Multiple Quantum Wells

In consideration of the difficulties of more and more components in integrated circuits and their complex arrangement,photonic integration technology has provided a new direction for chip manufacturing.Compared with the use of heterogeneous integrated technology to manufacture photonic chips,homogeneous integrated photonic technology have great advantages such as simple manufacturing procedures and lower costs.Based on the ability of quantum well diodes to realize the fuctions of light emission and detection at the same time,homogeneous integrated photonic chips have made great progress in visible and ultraviolet bands.This paper proposes a homogeneous integrated photonic chip with multi-functional light emission and detection characteristics in the infrared band and it has been successfully fabricated.Also,its photoelectric characteristics and On-chip communication performance have also been researched.The main works are appeared as follows:This paper designs the on-chip structure of the multi-functional transmitting and detecting chip.In this paper,Al In Ga As multiple quantum well diodes with the same structure are designed to be used as light emitters and photodetectors respectively.Then a straight waveguide structure are designed between the two to transmit optical signals.With the simulation and repeated adjustments by the RSOFT simulation software,the final parameter of waveguide can reduce the photon loss to 4%.After successfully fabricating the chip on Al In Ga As multi-quantum well materials on In P substrates by using photolithography,etching,and coating technology,this paper uses the light microscope and atomic force microscope to characterize the appearance of the chip in detail.The photonic device has a good exterior.The side wall is smooth and excellent in straightness.This article also conducts photoelectric performance tests on the on-chip diode devices,including the characteristics of current-voltage,capacitance-voltage,electroluminescence,and photoluminescence.The results of tests show that the diode device has a low turn-on voltage,fast current response,and good photoelectric conversion characteristic.In particular,under the action of an external infrared laser,the spectral responsivity of the diode used for detection exhibits a blue shift with increasing negative bias.Finally,this paper tests the unidirectional signal transmission function between both ends of the transceiver at different rates,and the results proves that the homogeneous integrated chip has the function of on-chip communication.The research on the homogeneous integrated photonic chip in the infrared band in this paper shows that the diode device of the photonic chip can not only be used as a transmitting or detecting device independently,but also can realize the communication function on the chip in combination with the In P optical waveguide.On the other hand,considering the factors such as fabrication accuracy and diode waveguide structure,after further research and optimization,it is believed that the communication rate in the infrared chip can be further improved.The research done in this paper shows that homogeneous integrated photonic chips based on Al In Ga As multiple quantum wells have various potential applications in the infrared band,including optical signals transmission,waiting to be discovered.