Investigation And Design Of 5G Broadband Highly Efficient Power Amplifier Based On GaN

The development of the fifth generation mobile communication system has put forth higher requirements for the performance indexes such as broadband and efficiency of the power amplifier which is the core components of the system,and it is urgent to replace the components that meet the needs of the national economic development at the same time.In order to solve the above problems,this thesis proposes a prematched power tube design scheme based on domestic power tube core to control the optimal impedance on the package plane,and studies the broadband high efficiency of continuous single-board power amplifier and continuous Doherty power amplifier based on domestic power tube.The main contents of this paper are as follows:1.High efficiency power tube design based on pre-matching.By analyzing the core structure and impedance characteristics of a 0.5 μm HEMT GaN power tube core independently developed by CETC xx,a 250 W multi-stage low-Q L-type pre-matched network power tube was designed by curve fitting technology.The measured saturation power was 54.6-55.8dBm in the 1.75-1.85 GHz narrow band,and the power additional efficiency was 70.5-72.8%.Microwave performance and stability test meet the project use requirements.2.Research on high efficiency and broadband of single-stage tube power amplifier based on single mode.The waveform reshaping parameter γ and real-part impedance correction factor δ are introduced into the voltage expression of the traditional class F operating mode to analyze the extended continuous class F operating mode theoretically.Using the 250 W GaN power tube independently designed and based on Chebyshev broadband impedance converter,a cross-octave continuous class F power amplifier is designed.The measured saturation power is 53.8-55.3dBm,the power additional efficiency is 52.8%-61.7%,and the saturation gain is 11-13.5dB within 1.1-2.4GHz.3.Research on high efficiency and broadband of single tube power amplifier based on combined mode.Combined with a domestic 50 W GaN power tube pre-matching circuit and Chebyshev transformer filter prototype structure,the feasibility of harmonic open-circuit,capacitive and short-circuit impedance required by combined mode is analyzed.A continuous Inverse Class F/Class J dual-mode power amplifier working at2.1-2.75 GHz is designed.The measured saturation power is 46.8-48.2dBm,the power added efficiency is 57.3%-67.9% and the saturation gain is 13.2-15.6dB,providing a design scheme for the power amplifier suitable for the application scenario of carrier polymerization technology.4.Research on high back-off efficiency and broadband of continuous Doherty power amplifier based on single mode.By controlling the non-infinite output impedance of the peak branch circuit at the power back-off point,the load impedance of the carrier power amplifier is modulated to the back-off impedance solution space of the continuous class F operating mode.A 100 W wide-band and high-efficiency symmetrical continuous class F Doherty power amplifier working at 1.7-2.9GHz is designed.The measured power amplifier saturation output power is 48.8-50.5dBm,the saturation power additional efficiency is 45.3%-66.4%,6dB back-off efficiency is 38.3%-54.3%,which has a certain efficiency advantage in the broadband range.