Ion-gated Synaptic Field-effect Transistor Based On Ti₃C₂X₂/MoS₂ Van Der Waals Heterojunctio

Among all kinds of synaptic devices,ion-gated synaptic transistor has been widely studied because of its obvious current and voltage hysteresis window and its working principle which is more similar to the way synapses work in brain.However,ion-gated synaptic transistor still have potential stability problems caused by dendrite growth.What’s more,the spontaneous diffusion of ions results in high static power consumption.In view of the above two problems,a new ion-gated synaptic transistor based on Ti₃C₂X₂/MoS₂（X=F,OH,O）heterostructure is proposed.2D material MoS₂ is used as the channel material,and the 2D material Ti₃C₂X₂ is introduced as the interfacial layer to improve the stability of the synaptic transistor and reduce its static power consumption.The main work of this dissertation is divided into the following two parts.The first part is the first principles electrical properties analysis of Ti₃C₂X₂/MoS₂ van der Waals heterostructure.it is found that the height of Schottky barrier of Ti₃C₂X₂/MoS₂ van der Waals heterostructure is quite different,the Ti₃C₂O₂/MoS₂ van der Waals heterostructure has the highest Schottky barrier.The second part is the study of the ion-gated synaptic transistor based on Ti₃C₂X₂/MoS₂heterostructure.By calculating the probability of electron tunneling,we find that Ti₃C₂O₂/MoS₂van der Waals heterostructure has the best effect on inhibiting electron tunneling.At the same time,by calculating the energy barrier and tunneling probability of lithium ion through the Ti₃C₂O₂,it is concluded that Ti₃C₂O₂ can well inhibit the aggregation of lithium ion on the surface of channel material.The inhibition of electron tunneling and ion aggregation at interface can effectively inhibit dendrite formation and improve the stability of synaptic transistor.Finally,we apply the synaptic transistor to the coding model of neuron for power analysis.The addition of Ti₃C₂O₂ reduces the total power consumption and static power consumption of synaptic transistor by 14.3%and 17.8%in the working time.The ion-gated synaptic transistor proposed in this thesis have high stability and low static power consumption,which have potential application value in the design of future neuromorphic chips.