Design,Process And Application Verification Of 3D RF Interconnection Based On TSV Technology

With the development of the semiconductor industry,the planar integration method represented by Moore’s Law cannot well meet the needs of short development cycle,multiple functions,and low cost.In order to further meet the requirements of multifunction and high-density integration,and break through the bottleneck of chip size,various advanced packaging technologies have emerged.Among them,TSV three-dimensional integration is a packaging technology that realizes vertical multi-chip interconnection through TSV.It has the advantages of short interconnection lines,high integration density,and low power consumption.It is the key enabling technology for the realization of the "beyond Moore" strategy.It is a semiconductor One of the research hotspots in the field.At present,TSV three-dimensional integration technology has achieved engineering commercial applications in fields including MEMS,CMOS image sensors,IR FPA,FPGA,memory,etc.,and it still shows a trend of accelerated penetration and expansion of applications,With the development of next-generation mobile communication networks such as 5G and advanced electronic information weapons and equipment,its application in the field of radio frequency is an important development direction.At present,whether in the field of advanced electronic information weapon equipment or mobile communications,system integrated packaging technology is the main integrated packaging method to realize radio frequency systems,mainly using high-performance packaging interposers as public interconnect substrates,radio frequency microwave microelectronic chips are mounted on one or both sides in the form of multi-chip components,and the electromagnetic shielding structure and plastic packaging are designed according to the application scenario.The high-resistance silicon TSV interposer can achieve high-precision wiring,has the advantages of low thermal expansion coefficient mismatch with integrated microelectronic chips,and can produce high-quality passive components with MEMS technology.It is a favorable competitor for RF system integrated packaging substrates.As the requirements for miniaturization,integration,and comprehensive performance of radio frequency systems are getting higher,the TSV interposer will develop in the direction of high frequency,high interconnection density,high performance,and high reliability.Based on this,this article has carried out a new 3D interconnection structure design,process and application verification research for the high-resistance silicon TSV interposer board used in 3D RF integration,aiming to reduce high frequency loss and improve RF reliability.The thesis mainly includes the following aspects:Literature review of TSV-based 3D RF integration.From the research status of TSV three-dimensional radio frequency integration technology,several future development directions are summarized:(1)High operating frequency;(2)Low loss;(3)Realizing multi-layer wiring and improving integration;(4)IPD technology.Summarized and sorted out the new TSV-based three-dimensional interconnect structure design and silicon-based IPD devices that have been published for future development trends and analyzed their advantages and disadvantages.Design and optimization of a new type of 3D RF interconnection based on TSV.A coaxial-like TSV design is proposed,and a ring grounded TSV array is designed around the radio frequency TSV.The grounded TSV array can reduce the leakage of transmission signals and the ability to shield external interference,thereby reducing high-frequency loss.A redundant RF TSV design is proposed to maintain excellent RF performance in the case of individual TSV failures.An equivalent circuit model of the proximity effect between redundant TSVs is established,and the change law of its high-frequency performance is analyzed.Propose a TSV-based RF structure that vertically penetrates the substrate.The rectangular waveguide,the substrate integrated waveguide and the coplanar waveguide are connected to form a three-dimensional stack structure.According to the needs of the application scenario,the size parameter optimization is completed.TSV-based 3D RF interconnection manufacturing,test analysis and optimization.On the basis of the research group’s high-resistance silicon TSV interposer process,the sample was manufactured,tested and analyzed,and the influence of the metal resistivity and surface roughness caused by the manufacturing process on the electrical characteristics was investigated and studied.Sample surface treatment,annealing treatment,etc.to improve the feasibility of optimizing electrical characteristics.Based on the TSV-based 3D RF interconnection research,the design,assembly and test analysis of the 3D integrated 6-10GHz channelized frequency conversion receiver based on the high-resistance silicon TSV interposer was carried out,including the evaluation of the high-resistance silicon TSV interposer high-frequency loss and isolation analysis of the upper RF signal transmission channel,integrated filter design analysis,post-processing optimization for manufacturing high-resistance silicon TSV interposer to achieve electrical performance improvement verification,high-resistance silicon TSV interposer RF chip integration and Assemble,and test and analyze the frequency conversion function,channel gain,channel isolation,transmission loss,power consumption of the prototype.Finally,the summary and outlook,including work summary,innovation points and next work suggestions.