The Study Of Irradiation Characteristics Of SiGe HBT With Different Emitter Areas At Extreme Temperatures

With the development of integrated circuit technology,many devices including integrated circuits are operated in the irradiation environment,such as satellite system,spacecraft,weapon system,particle physics detector,etc.The irradiation damage characteristics of semiconductor devices are more concerned.In addition,extreme temperature can change the performance of electronic devices,which affects their normal operation.SiGe HBT have irradiation-hard characteristics and can operate at wide temperature range(1K ～ 400K).SiGe HBT with large emitter area are widely used in space communication fields,so they have been studied more on the irradiation damage characteristics in extreme temperature environment.In this paper,systematic irradiation experiments were carried out on high-power SiGe HBT,dc/ac characteristics with different emitter areas before and after irradiation were peformed at extreme temperatures(low temperature: 77 K,high temperature: 393K)and room temperature(300 K).The irradiation characteristics of SiGe HBT at different emitter areas and extreme ambient temperatures were studied,and the irradiation damage mechanism was analyzed.Results showed that irradiation degrades the device performance,and the SiGe HBT with large emitter area are more damaged by irradiation.At the same time,SiGe HBT showed better resistance to irradiation at extreme temperature compared with room temperature.In addition,the SiGe HBT irradiation model was established using Sentaurus TCAD based on the experimental results,and the simulation results were consistent with the experimental results.To reveal the physical mechanism of irradiation effects on SiGe HBT with different emitter areas at extreme temperatures,electron density,Shockley-Read-Hall(SRH)carrier recombination rate and carrier mobility were extracted from the model.The results show that they have an important effect on the electrical properties of SiGe HBT.Modeling research can significantly reduce the difficulty of experiment and cost,shorten the research and development cycle,and provide theoretical guidance for experiment.It is concluded that SiGe HBT has great potential in the field of radiation resistance and space application.