| As is known,packaging technology is an important part of integrated circuit technology.Especially in recent years,with the continuous improvement of circuit integration,advanced packaging technology has become an important way to continue the Moore’s law.3D packaging guided by Through Silicon Via(TSV)interconnection technology is considered a typical representative of advanced packaging technology.TSV interconnect technology can not only reduce packaging volume and increase integration,but also has superior electrical properties,which has attracted extensive research at home and abroad.The electroplating filling quality of conductive medium copper is an important factor affecting the electrical properties of IC chips based on the TSV technology.However,there is still a lack of characterization methods that can directly record and analyze the electroplating process from the microscopic point of view on the research of TSV copper filling quality optimization.In order to investigate the nucleation and growth kinetics of copper electroplating by TSV,an in-situ liquid phase characterization scheme based on a normal scanning electron microscope(SEM)is proposed.In this scheme,a microchannel array device for in-situ liquid phase characterization device is designed and fabricated.The device is used to realize the real-time and high-resolution characterization of the TSV electroplating copper filling experiment under the SEM.It provides a new research method for exploring and optimizing the filling quality of the copper electroplated in the TSV.It also promotes the development of in-situ liquid phase characterization analysis in China.The specific works of this paper are as follows.1.Microchannel array devices for in-situ liquid phase characterization are designed and fabricated.The devices are fabricated by typical semiconductor fabrication techniques,such as lithography,deep silicon etching,sputtering,and so on.2.Graphene is used as the observation window and packaging material of the in-situ liquid phase characterization device to complete the assembly of the device.In this part,based on the polymer-assisted wet transfer graphene technology,a stack transfer scheme of twice transfer monolayer graphene is used.3.The reliability and characterization resolution of the in-situ liquid phase characterization devices are investigated.The generation and motion of the bubbles caused by electron beam irradiation and the deposition induced by the electron beam are characterized and analyzed under the SEM.The resolution of the SEM characterization based on the designed device is about 8.5 nm.4.The in-situ SEM characterization of copper filling in TSV electroplating is investigated.The growth and dissolution process of copper process at cathode and anode copper are characterized by SEM,respectively.The nucleation and crystallization characteristics of electroplating copper and the formation of ’ dead copper ’ during copper dissolution are analyzed based on the in-situ devices.It provides a new basis for the optimization and analysis of TSV copper electroplating. |