| With the development of the electronic technology,semiconductor devices play a more and more important role.At present,semiconductor devices are widely used in electronic field,communication,photoelectric conversion,military medicine and other fields,and also have more widespread applications in our daily life.In recent years,semiconductor materials have become the focus research of many researchers.Good semiconductor materials need to have suitable energy band width,high pressure resistance,high temperature resistance and good electron transport properties.As one of the representative materials of the fourthgeneration semiconductor,gallium oxide has an ultra-wide band gap,which is four times than Si,and gallium oxide has a high voltage resistance,which leads to its breakdown.The voltage is very high and it can work in a large voltage range.Besides,gallium oxide has strong light absorption in the solar blind region,which can be very suitable as a kind of photodetector material.Perovskite material is a new class of materials with unique optical and electronic properties,which have high optical absorption coefficients,long carrier diffusion lengths,large carrier mobility and tunable optical band gaps.The cost of preparing perovskite materials is relatively low and the preparation process is simple,which has attracted great attention.In this paper,we based on gallium oxide substrate and used different iodide perovskite materials to prepare a series of gallium oxide-perovskite photodetectors.The purpose in this paper is to prepare excellent devices.There are the staple research work of this paper:A gallium oxide photodetector was fabricated.The dark current of the prepared device reached 10-12 A,photocurrent reaches more than 10-10 A,and the photo-dark current ratio reached 103.With a 5 V bias voltage applied,the photocurrent of the device reached more than 10 nA,the photocurrent is positively correlated with the increasing trend of light intensity.The rising response time of the device reached 9 s,and the falling response time reached nearly 1 s.Compared with previous studies,the performances of our fabricated single gallium oxide devices are within acceptable limits without microfabrication.Organic-inorganic perovskite MAPbI3-Ga2O3 photodetectors was fabricated.The dark current of the device reached 10-14 Althe photocurrent reached more than 10-8 A,and the light-dark current ratio reached 105.With a 5 V bias voltage applied,the photocurrent of the device reached a dozen nanoamps.The increasing trend of current and light intensity is positively correlated.In addition,the rising response time of the device is reduced to nearly 5s,and the falling response time is reduced to more than 0.3 s.With a bias voltage of 10V and a light intensity of 200 μW/cm2 is applied,the R and EQE of the device reached 16 mA/W and 7.5%,respectively.The D*was reached 8.3×106 Jones.A CsCu2I3-Ga2O3 photodetector was fabricated.Based on the organicinorganic oxide perovskite gallium photodetector,a lead-free metal halide oxide perovskite gallium photodetector was fabricated.The dark current of the device reached between 10-14 and 10-13 A,the photocurrent reached 108 A,and the light-dark current ratio reached more than 105.Compared with single gallium oxide device,the photo and dark current was increased more than 100 times.With a 5 V bias voltage applied,the photocurrent reached more than 20 nA.The rise response time and fall response time reached more than 3 s and 0.2 s,respectively.Under 10V bias,the R and EQE of the device reached 21 mA/W and 10%,respectively.The D*was reached 1.2×107 Jones.It is noteworthy that the current reached several nanoamps when the device under 0 bias,which achieving some self-power abilities. |
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