| In many sensors,oxide semiconductor gas sensor as one of them,in the production of simple,high sensitivity,small volume,in the actual industrial production and living environment monitoring is widely used.In the actual production of the sensor application process,it is vulnerable to the influence of higher temperature,resulting in low sensitivity and weak response recovery ability,it is necessary to optimize the performance of its improvement.Sensitive material is the most critical part in the composition of gas sensor,which directly determines the level of gas sensitive performance.The selection and preparation of sensitive material is very important in the research and development of the sensor.This paper mainly studies the nickel oxide gas sensor.The material was characterized by XRD and SEM,and the best operating temperature,response recovery time,selectivity,detection lower limit were tested to study its gas sensitive performance.This paper mainly studies the following aspects:(1)preparation of NiO gas sensor,using the technique of electrospinning,and on this basis,1,3,5mol% Cr ion doped NiO gas sensor preparation.Through the gas sensitivity test,it is found that the 3mol%Cr ion doped NiO gas sensor has a super high response value for n-butanol,and the response value for 100 ppm n-butanol test is 6.67,which is 5times as much as the NiO gas sensor.(2)In order to improve the response value,recovery time and detection limit of n-butanol,the electro-spinning technology was used to prepare a gas sensor with Pd ion doped in Cr and Ni ion ratio of 3mol%.Through the addition of precious metal Pd,the gas-sensitive characteristic test found that the response value of n-butanol test for 100 ppm is 9.88,which is 7 times as much as that of NiO gas sensor. |