Gas Isolation Nanoimprint And Doping To Control The Conductivity Of Metal Interconnection

Over the past 20 years,nanoimprint lithography(NL)has become an important nanofabrication technology because of its high-throughput,low-cost,high-fidelity,and simple operating procedure.According to the International Technology Roadmap for Semiconductors,it is one of the most promising next-generation patterning technologies.From hot embossing NL,several NL techniques have developed,such as step-flash,roll-to-roll,inverse,laser assisted and air assisted,and electronic-capillary-force and electrochemical NL.At present,direct-metal-patterning NL is particularly popular.In addition,micro-and nanometer-scale metallic patterns can be directly realized by laser-assisted melting with sharp and hard molds,and pseudoplastic fluids with metal nanoparticles in air-press NL.Moreover,gas pressure is the best choice to improve the uniformity of the press force in the present reports.It includes inflatable module,vacuum negative pressure method and compressed gas module.To achieve a goal of prevent the printing air from entering the enclosed area of the mold and the wafer in nanoimprint process,An O-ring is fabricated on the mold that can effectively prevent the gas.The relationship between the width of the O-ring and its surface roughness,surface tension coefficient,friction coefficient,height of the liquid bridge,and the contact angle is investigated.A mold with this optimization O-ring could greatly reduce the cost of the mold,the cost of patterning and the air-press in nanoimprint lithography.In addition,this paper have studied the relationship between the dispersibility of Ag nanoparticle and dispersing agent,thus the relation of dispersing and conductivity was investigated.The experiment results show that the conductivity of the nanowire does not behave obvious change when doping other metal nanoparticle,such as Ni,Co,Mn,Ti,Cr and so on,Furthermore,the conductivity behave close relation to the doping amount.