Electrical Properties And Detection Mechanism Of Novel 3D-Spherical Electrode And Cylindrical Two-Sided Electrode Silicon Detectors

Presently,as society advances and scientific breakthroughs emerge,semiconductor materials have become an indispensable aspect of daily life,leading to the advent of detectors based on these materials.Traditional detection technology is increasingly refined,and among numerous semiconductor detectors,silicon-based detectors are widely employed in various domains,such as high-energy physics,deep space exploration,military,medical and aerospace sectors,due to their cutting-edge,mature techniques and exceptional performance.Semiconductor detectors continually evolve,transitioning from 2D to 3D structures,with both their configuration and capabilities being progressively enhanced.In the second section,a cylindrical double-sided electrode position-sensitive silicon detector is proposed,building upon the dual-sided process of traditional 2D silicon strip detectors.Employing Technology Computer Aided Design(TCAD)simulations,the structure is analyzed,and the electrical properties,including electric field,potential,electron concentration distribution,depletion voltage,leakage current,and capacitance,are assessed to validate the design’s rationality.The detector gathers angular information about particle incidence from the front collection electrode,while the rear collection electrode captures the radial data.These two parameters allow for precise determination of particle incidence locations,realizing position resolution.In contrast to conventional detectors assembled into arrays for position resolution,this innovative approach achieves resolution within a single device,eliminating dead zones between units and elevating detection efficiency.Compared to 2D silicon detectors reliant on wafer thickness and longitudinal depletion,3D silicon detectors have garnered researchers’ attention due to their adjustable electrode spacing,superior radiation resistance,rapid response,and low-noise,high-resolution properties.Conventional 3D trench electrode silicon detectors represent a widely utilized and discussed semiconductor detector.To address structural deficiencies in these detectors and ensure a more uniform electric field distribution within sensitive regions,unaffected by angles,while further reducing readout capacitance and full depletion voltage,the third section introduces a novel 3D spherical electrode silicon detector.Overcoming fabrication challenges inherent to traditional spherical and hemispherical detectors,this solution offers a feasible method for producing spherical electrodes and incorporates advantages from silicon drift detector(SDD)structures.Simulations of the electric field,potential,electron concentration distribution,depletion voltage,leakage current,and capacitance for this new detector are conducted,systematically examining and analyzing its electrical characteristics.The novel detector exhibits outstanding performance compared to conventional 3D silicon detectors.In the fourth section,the electrical properties of the new 3D spherical electrode silicon detector under irradiation conditions are simulated,including leakage current,capacitance,transient response currents induced by heavy-ion incidence,and specific gravity fields,demonstrating that irradiation impacts the detector’s electrical performance and suggesting that reducing electrode spacing can enhance radiation resistance.