| With the rapid development of semiconductor science and technology and material technology,more and more new material semiconductor detectors have begun to enter people’s vision.The most commonly used semiconductor materials are germanium and silicon.In the large family of semiconductor detectors,silicon-based semiconductor detectors play an important role.Due to their advantages in various electrical properties,they are widely used in high energy in photon and radiation environments Particle detection.Nowadays,there are many types of traditional three-dimensional groove detectors,and the research on them is more in-depth.The electrode silicon detector can effectively solve these shortcomings.The structural design of the new detector,fully depleted voltage,capacitance and charge collection parameters are used to characterize its advantages over the traditional three-dimensional trench detector in terms of electrical performance,and a preliminary study of the new detector array is made.The main research contents of this article are as follows:(1)The structural design concept of the new hemispherical shell electrode silicon detector is described and studied.By comparing traditional three-dimensional trench detectors,we find that traditional three-dimensional trench detectors have the disadvantages that the dead zone is too large,and the electrode spacing depends on the angle θ,resulting in uneven electric field distribution.According to the application field of the new hemispherical shell electrode silicon detector,we determined the N-type doping type of the detector matrix;by calculating the comparison of the full depletion voltage corresponding to the position of the P-N junction,we determined that the P-N junction is located on the periphery Electrode position selection.Through these studies,the structural model of the new hemispherical shell electrode silicon detector was finally determined.(2)The corresponding electrical performance calculation method is established for the structural model of the new hemispherical shell electrode silicon detector,and the corresponding electrical model of the new hemispherical shell electrode silicon detector structure model under non-irradiation conditions in Silvaco-TCAD Simulation of performance simulation.Through research,it was found that the new type of semi-spherical shell electrode silicon detector with a radius and thickness of50 μm has a low total depletion voltage and low energy consumption.In the case ofno irradiation,its full depletion voltage is 8 V,which is lower than The full depletion voltage of the traditional three-dimensional trench detector of the same size;the capacitance of the new hemispherical shell electrode silicon detector is only related to its structure,and the lower the detector capacitance,the lower the corresponding noise will be,its capacitance is 3.2 f F in the absence of irradiation,which is much lower than that of the traditional three-dimensional trench detector;for the special structure of the new hemispherical shell electrode silicon detector,a special structure is derived Under the charge collection model,the electric field of the new detector was simulated using Silvaco-TCAD simulation software,and the specific gravity field in the hemispherical electrode was simulated and compared.It is concluded that the distribution curve of the specific gravity field at different angles θ is close,and the curve obtained by simulation can be in good agreement with the theoretical(3)In this paper,through the study of the electrical performance of the new detector array,it is found that the potential distribution is uniform,and the electric field distribution is approximately the same as the electric field distribution of the detector structural unit.It is not affected by the adjacent unit.The study found that the full depletion voltage of the array is relatively lower than that of the structural unit,which may be due to the common influence of multiple anodes of adjacent cells. |
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