Research On Simulation Of Strong Magnetic Pulse Fault Injection In Digital Integrated Circuits

With the development of high-performance equipment systems in the direction of strong electromagnetics,the impact of strong magnetic field environments on equipment systems is becoming more and more significant.As the control core component of the equipment system,the digital integrated circuit is very sensitive to the strong magnetic pulse interference of the strong electromagnetic equipment system.Therefore,it is very urgent to study the influence of strong magnetic pulses on digital integrated circuits.The purpose of this paper is to study the influence mechanism of strong magnetic pulse on digital integrated circuits,and to carry out the simulation research of strong magnetic pulse fault injection in digital integrated circuits.The main research work and results are as follows:(1)Based on the Sentaurus TCAD simulation tool,this paper completes the simulation of the characteristics of the SMIC 130 nm process MOSFET device under the strong magnetic environment.This paper summarizes the influence mechanism of the strong magnetic field on the MOSFET device.In this paper,the characteristic changes of MOSFET devices under the influence of strong magnetism are simulated from the aspects of magnetic induction intensity,incident angle,channel length,doping concentration and gate voltage.It is found that the strong magnetic field mainly produces the magnetoresistance effect in the channel of the MOSFET device,thereby reducing the mobility of the device and causing the change of the device characteristics.In the simulation process,it is found that the characteristic change of the device has a nonlinear relationship with the magnetic induction intensity.The effect of strong magnetic pulses at different incident angles on the device depends on the effective vertical magnetic field component.A built-in electric field is easily formed inside a long-channel device,thereby weakening the magnetoresistive effect.The higher the doping concentration,the smaller the magnetoresistive effect of the strong magnetic field.The higher the gate voltage of the MOSFET device,the closer the channel carriers are to the oxide layer,the lower the carrier mobility,and the less affected by the magnetoresistance effect of the strong magnetic field.In this paper,the influence mechanism of strong magnetic environment on MOSFET devices is summarized and analyzed,and the reduction factor expression of the influence of strong magnetic field magnetoresistance effect on the characteristics of MOSFET devices is summarized.After calculation,the calculated value of the reduction factor expression is very close to the simulation result,which verifies the validity of the expression.(2)On-chip power network layout 3D modeling technology and finite element simulation of strong magnetic pulse.This paper develops an algorithm for 3D modeling of digital integrated circuit layout based on python.Through the layer extraction and triangulation algorithm of the gdspy library,the graphics information of the metal layer is extracted from the GDSII layout file of the Leon2 processor.After that,the layer thickness is determined according to the process library,and the STL 3D model file of the specified metal layer is generated.The metal layer models are spliced into a complete 3D model of the on-chip power network.In addition,this paper imports the three-dimensional model of the on-chip power network into the COMSOL finite element electromagnetic simulation software for electromagnetic simulation.By setting the Gaussian strong magnetic pulse simulation environment,this paper obtains the transient voltage fluctuations generated by the strong magnetic pulse on the on-chip power supply network.(3)The SPICE model of the Leon2 processor system based on SMIC 130 nm process is built and the SPICE-level strong magnetic pulse fault injection simulation is implemented.This paper builds a SPICE-level Leon2 processor system,so as to realize the transformation of the processor system from RTL circuit to SPICE circuit.In this paper,the initialization,bubble sorting and matrix multiplication procedures are also stored in the SRAM SPICE model,thereby realizing the instruction operation of the SPICE model of the processor system.Finally,by applying the change of MOSFET mobility and the potential fluctuation signal of the on-chip power supply network,the SPICE model of the Leon2 processor system is injected with a strong magnetic pulse fault.Then the paper also tests the effectiveness of the fault injection method and finds that the fetch stage of the pipeline is the least tolerant to faults.