Research On In₂O₃ Optoelectronic Transistor Array And Its Brain-like Bionics

With the development of neuromorphic electronic technology,brain-like bionic research has received extensive attention,and researchers have begun to focus on the design and manufacture of synaptic electronic devices.In the traditional three-terminal silicon-based oxide device,due to the small specific capacitance of the silicon oxide gate dielectric,the turn-on voltage of the device is too large,which greatly increases the energy consumption of the device.These are contrary to the original intention of synaptic electronic device design.In this study,the ion-gel with high specific capacitance introduced by screen printing and the aluminum oxide（Al₂O₃）layer with trapping effect introduced by thermal evaporation were used as a stacked gate dielectric to construct an electrolyte gate-controlled indium oxide（In₂O₃）with excellent performance.It effectively reduces the sub-threshold swing（SS）of the In₂O₃ device during backsweep,improves the storage capacity of the device,and simulates the basic function of synapses.In addition,the optoelectronic properties of electrolyte-gated In₂O₃ devices were studied,and an artificial visual perception array capable of adapting to ambient brightness was developed on this basis.The main contents of this article include:（1）The microelectronic processing technology of the In₂O₃ transistor array was optimized,and the best fabrication conditions were obtained.The screen-printed ion-gel and Al₂O₃ layer to form a stacked gate dielectric,and In₂O₃ transistor array with a large hysteresis window and an SS value of less than 60 m V/decade during backsweep was fabricated.It is confirmed that the SS value of less than 60 m V/decade originates from the positive charge trapping of the Al₂O₃ layer.The simulation of basic synaptic functions such as excitatory postsynaptic currents,double-pulse facilitation,frequency synaptic plasticity,and transition from short-range to long-range plasticity by In₂O₃ transistors was investigated.Through the simulation of synaptic function under electrical impulse stimulation,flash memory and high-pass filtering functions inspired by biological brains are realized.（2）The optoelectronic properties of In₂O₃ transistor arrays were investigated.For the first time,the negative photoconductivity of this type of device was discovered.The negative photoconductive behavior caused by the redistribution of photogenerated carriers induced by the strong electric field generated by the ion-gel is elucidated.In clarifying the formation mechanism of the negative photoconductive effect,the artificial vision adaptive process is successfully simulated,which can show the adaptive behavior of light under different light intensity levels,showing the visual adaptability with an adjustable threshold range to the external environment.