| Since the last century,gallium metal has been more and more widely used in people’s production and life,but due to its rarity and unique form of resources,it is very important to study how to extract and recycle gallium from secondary resources.Through radical polymerization,the monomer sodium p-styrenesulfonate（SSS）was grafted onto the surface of D301 to obtain the grafting material D301-g-PSSS.The D301-g-PSSS with the best adsorption performance for Ga（Ⅲ）was prepared under the conditions of 10 g SSS and 1%APS for 16 h and 62℃.By virtue of the electrostatic and coordination interaction force between the sulfonic acid group and Ga（Ⅲ）,the adsorption reaction was carried out at room temperature in an acidic solution at p H 2 for 24 h to reach equilibrium,with a saturated adsorption capacity of 386.6 mg·g-1.The two kinetic model were fitted and found to conform to the Lagergren-first-order kinetic model,while three isothermal models were fitted and found to conform to the Langmuir type of monolayer adsorption.The selectivity coefficient k of the D301-g-PSSS for Ga（Ⅲ）is 5.02 when coexisting with the interfering ion Zn（Ⅱ）,and the D301-g-PSSS material can be recycled multiple times.Monomer itaconic acid（IA）was grafted onto the surface of resin by surface grafting polymerization to obtain D301-g-PIA grafting material.The D301-g-PIA with the highest adsorption performance for Ga（Ⅲ）was prepared under the conditions of 10 g IA and 1.39%APS for 23 h and 56℃.By virtue of the electrostatic and coordination interaction force between carboxylic acid group and Ga（Ⅲ）,the reaction reached equilibrium after 30 h at room temperature and a solution p H of 2,with a saturated adsorption capacity of 356.15mg·g-1.The two kinetic model were fitted and found to conform to the Lagergren-first-order kinetic model,while three isothermal models were fitted and found to conform to the Langmuir type of monolayer adsorption.When coexisting with the interfering ion Zn（Ⅱ）,the selectivity coefficient k of the D301-g-PIA for Ga（Ⅲ）is 9.23,and the D301-g-PIA material can be recycled multiple times.D301-g-ⅡPSSS surface ion imprinted material was synthesized by grafting polymerization synchronized with crosslinking imprinting method with SSS as the functional monomer,MBA as the crosslinking and Ga（Ⅲ）as the imprinting template.When the monomer is 3 g,the amount of APS is 2%,the carrier D301 is 0.3 g,and the amount of MBA is 20%,the synthesized imprinted material D301-g-ⅡPSSS has the best adsorption effect on Ga（Ⅲ）.At room temperature,in an acidic solution of p H 2,the adsorption reaction reaches equilibrium at an adsorption capacity of 503.9 mg·g-1,after 12 h,the adsorption effect is superior to that of the non-imprinted material D301-g-NIPSSS(240 mg·g-1).When coexisting with the interfering ions Zn（Ⅱ）and Cu（Ⅱ）,the adsorption selectivity coefficients k of D301-g-ⅡPSSS were 119.98 and 58.70,respectively,compared with non-imprinted material,the relative selectivity coefficients k′were 9.76 and 3.01,respectively.The adsorption amount increased from 386.6 mg·g-1 for D301-g-PSSS to 503.9 mg·g-1 after blotting,and the selectivity coefficient k increased from 5.02 for D301-g-PSSS to 119.98,which fully indicates that the D301-g-ⅡPSSS imprinting material has a specific recognition and selection performance for Ga（Ⅲ）.The two kinetic model fits were found to fit the Pseudo-second-order kinetic model,and the three isothermal model fits were found to fit the Langmuir type of monolayer adsorption.Meanwhile,the process is an endothermic reaction caused by entropy increase.In addition,D301-g-ⅡPSSS imprinted material can be used for multiple cycles.D301-g-ⅡPIA surface ion imprinted material was synthesized by grafting polymerization synchronized with crosslinking imprinting method with MBA as the crosslinking agent,IA as the functional monomer and Ga（Ⅲ）as the imprinting template.When the monomer is 3 g,the amount of APS is 1.3%,the carrier D301 is 0.2 g,and the amount of MBA is 10%,the synthesized imprinted material D301-g-ⅡPIA has the best adsorption effect on Ga（Ⅲ）.At room temperature,in an acidic solution of pH 2,the adsorption reaction reaches equilibrium at an adsorption capacity of 403.74 mg·g-1,after 24 h,the adsorption effect is superior to that of the non-imprinted material D301-g-NIPIA(213 mg·g-1).When coexisting with the interfering ions Zn（Ⅱ）and Cu（Ⅱ）,the adsorption selectivity coefficients k of D301-g-ⅡPIA were 175.52 and 74.78,respectively,and the relative selectivity coefficients k′of D301-g-NIPIA were 22.42 and 4.39,respectively,the adsorption selectivity coefficient k increased from 9.23 of D301-g-PIA to 175.52,which fully indicates that the D301-g-ⅡPIA imprinting material has a specific recognition and selection performance for Ga（Ⅲ）.D301-g-ⅡPIA has good adsorption and selection performance for Ga（Ⅲ）.The two kinetic model fits were found to fit the Lagergren-first-order kinetic model,and the three isothermal model fits were found to fit the Langmuir type of monolayer adsorption.Meanwhile,the process is an endothermic reaction caused by entropy increase.Furthermore,the imprinted material D301-g-ⅡPIA can be recycled multiple times. |
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