Preparation And Performance Study Of Chitosan Composite Film Physical Transient Memristo

E-waste causes serious pollution to the environment,while physical transient electrons are capable of rapid self-destruction by external stimuli after achieving their function.This thesis combines physical transient electronics with memristors,Al/chitosan composite film/ITO sandwich memristor,Mg/chitosan composite film/ITO sandwich memristor and Mg/chitosan composite film planar memristor were prepared,and the device preparation process was given to study the memristor characteristics,resistance mechanism and physical transient characteristics.Improving the switching ratio of chitosan-based memristor and reducing the operating voltage were studied.By doping different materials in chitosan,the influence of doping on memristor properties was studied.The experimental results show that doping starch,GO and Ag can effectively increase the switching ratio of the device from 10~2 to10~4,while reducing the operating voltage.Improving the repeatability of Ag-doped chitosan amnesia was investigated.Three active layers with different thicknesses were prepared by spin-coating,drop-coating and casting methods.The results show that the number of repeatable amnestic resistors can be increased from 100 to 200 times by increasing the thickness of the active layer.The degradation transient ability of the memristor was enhanced.By replacing the Al with the soluble Mg,both the active layer and electrode layer are soluble in DI water.In addition,the planar device by the casting method does not require a substrate,and the device can be dissolved in DI water within 12 min to achieve complete degradation.