Study On Memristor Characteristics And Physical Mechanisms Based On Egg Protein Film As Functional Layer

As a non-linear resistor with memory function,memristor has brought great changes in the structure,principle and design theory of electronic circuit.It is the fourth passive basic circuit device after resistor,capacitor and inductor,and provides direction for further improvement of electronic technology storage.This topic mainly explores the resistance and synaptic performance of flexible transparent memristor based on egg albumin material.On this basis,the influence of different electrode materials on device performance and the influence of the metal gold embedded in the solution of laminin on device performance were investigated.In addition,the memristor device prepared in this project has high transmittance and flexibility,and the egg white used as the resistance material has the advantages of biocompatibility,biodegradability and low cost.The main contents of this subject are as follows:1.The "sandwich" structure of tungsten(W)/ egg white(Egg albumen)/ indium tin oxide(ITO)/ polyethylene terephthalate(PET)memristor was prepared by using soluble protein film as resistance layer.The memristor has good uniformity and high transparency.The high and low resistance of the device can be stabilized for at least 100 cycles and the ratio can reach two orders of magnitude,which proves that the device has repeatable switching behavior and stable data storage capability.In addition,the prepared storage devices show good mechanical durability and reliability after repeated bending.In neurobionics,the function of biological synapses is simulated by adjusting the pulse voltage applied to the device.It is found that adjusting the pulse amplitude can realize the transformation from paired-pulse facilitation(PPF)to paired-pulse depression(PPD).At the same time,the magnitude of the pulse frequency and the number of pulses are observed,and the forgetting speed of the device is measured.And the transformation of long-term and short-term plasticity has a great impact.The experimental results show that this kind of memristor device based on egg protein uses cheap natural organic materials to realize intelligent artificial synaptic system,which is attractive in biocompatibility and biodegradable electronic devices.2.The factors affecting the resistance performance of memristors are not only the choice of resistance materials,but also the electrode materials.The tungsten(W)electrode was replaced by silver(Ag)electrode when the device structure was unchanged.The electrochemical performance of resistance memory based on Ag electrode was analyzed.At the same time,the effects of two different electrode materials on the rheological properties of protein film rheological memory were compared.It is found that when the device is W electrode,the device exhibits typical complementary resistance switching behavior,while when Ag electrode is used,the device exhibits bipolar resistance switching behavior,which may be due to the migration and diffusion of active electrode Ag under the action of electric field in the resistive dielectric material,participating in the high-low resistance switching of the device.3.Another important way to improve the resistance performance of memristors is to optimize the materials of the functional layer.Here,we incorporate a certain concentration of metal gold into the protein solution as the resistance layer to study the resistance performance of devices and simulate the bionic performance of nerve synapses.The experimental data show that the device under this structure exhibits typical bipolar memristor behavior,and the measured current through the device shows a slow upward trend.This phenomenon can be used to simulate the ability of biological synapses to perceive and remember stimuli,enriching the types of simulated synapses.