| The Goos-H(?)nchen shift(GH shift)is the transverse displacement of a reflected beam and has a wide range of applications in fields such as sensing and detection.In recent years,the emergence of monolayer graphene has extended the range of research for GH shift.Monolayer graphene,as a twodimensional material,has excellent optoelectronic properties due to its unique energy band structure,and its highly tunable optical properties provide excellent conditions for enhancing and tuning GH shift.In this paper,the GH shifts of several hybrid structures containing monolayer graphene are investigated using the rigorous coupled-wave analysis method,the transmission matrix method and the static phase method.The main studies are as follows.Firstly,we have studied the GH shift in a hybrid structure consisting of a metallic gratings layer,monolayer graphene,dielectric space layer and metallic substrate.It is found that the amplitude of GH shift can be as high as 3616 times of incident wavelength at the special working frequency.This enhancement can be understood from the generation of the coupled surface plasmon polaritons between the two surfaces of the dielectric space layer.Furthermore,we show efficient control of the GH shift by adjusting the chemical potential of the monolayer graphene or the geometrical parameters of the proposed structure.Our result confirms the advantages of metallic grating structures containing monolayer graphene in the direction of enhanced and tuned GH shifts,which provides a possible approach for the design of optoelectronic devices such as surface plasmonic detectors and sensors.Secondly,we demonstrate the GH shift can reach 4419 times of the incident wavelength in a multi-defective layer photonic crystal hybrid structure containing monolayer graphene.The enhanced GH shift of the structure originates from the localized defect modes in the defective layers of the photonic crystal structure enhancing the interaction between light and the monolayer graphene-based hybrid structure.Furthermore,the position,amplitude and sign of the GH shift can be controlled by varying the chemical potential of the monolayer graphene or the geometrical parameters of the proposed structure.Our results demonstrate the potential of monolayer graphene-based multilayer structures for future applications in optoelectronic devices such as optical switches.Finally,we investigated the GH shifts in the parity-time symmetry multilayer structure containing monolayer graphene.It is found that the enhanced and negative GH shift can be achieved in the hybrid structure when a transverse electric wave is incident on the structure,with the amplitude of the GH shift can reach to 2127 times of the incident wavelength.In particular,the amplitude and position of the GH shift’s valley in the hybrid structure are weakly dependent on the incident direction.Furthermore,tunable GH shifts can be achieved by modulating the chemical potential and relaxation time of the monolayer graphene as well as the geometrical parameters of the proposed structure.Our results establish a new platform for the incidence direction-dependent GH shift,which provides new ideas for the design of optoelectronic devices. |
