The Research On The Effect Of Hydroxyl Group On The Memory Performance Of Organic Field Effect Transistors

As the information age continues to evolve,the demand for memory performance is gradually increasing,and the role of organic field-effect transistor memory as an important component of future organic electronic circuits is becoming more and more obvious.Field-effect transistor-based memory has become one of the most promising data storage technologies for emerging memory applications such as sensory memory,storage memory,and neuromorphic computing.Researchers have taken a multifaceted approach to develop high-performance organic field-effect transistor memories.In this paper,we take hydroxyl-rich materials as the main research object to understand the material selection and film preparation conditions,and build the structure-performance relationship by studying the morphology of films and device performance to prepare organic field effect transistor memories with high storage performance and provide feasible solutions to reduce the effect of hydroxyl groups on device performance.The details of the study are as follows.In the first part,PVA rich in hydroxyl groups was chosen as the dielectric layer and the effect of hydroxyl groups on the device was reduced by introducing hydrophobic PTFE films in the lower layer.By adjusting different solvents,solution concentrations,and film preparation processes,the preparation of flatter PVA films was achieved.After that,the transistor performance and storage capacity based on single-layer and double-layer devices were compared by regulating the concentration of the lower PTFE film,and devices with larger storage capacity and storage stability were prepared.The second part is to investigate the effect of the blending ratio on the device performance by introducing the carbonyl-rich small molecule material TMP into the indigo solution and using the method of spin coating of the blending solution.Due to the presence of hydroxyl groups on the surface of indigo red film,its film roughness is high and the storage stability of the device is reduced.We improve the device performance by introducing the small molecule material TMP.The improvement of the surface morphology of the films and the improvement of the storage capacity of the devices were achieved by doping the TMP solution and the indigo solution with different ratios.In the third part,the small molecule material indigo is chosen and the effect of the density of hydroxyl groups on the device performance is investigated by introducing polymer PS to improve the film morphology and control the distance between the indigo molecules.Indigo small molecule is similar to indigo,which has the problem of high film roughness and poor device storage stability.We improved the morphology of the film by the introduction of PS and made the hydroxyl groups,which are sensitive to water molecules in air,have less chance to contact with air,thus reducing the effect of hydroxyl groups on the device and improving the stability of the device.At the same time,by introducing the polymer PS,we increased the ability to capture holes on top of the original ability of the device to capture and store electrons,realized the bipolar storage characteristics,and prepared devices with large storage capacity and storage stability.