| As the performance requirements of GaAs-based high-power semiconductor lasers continue to increase in the application field,in addition to improving device manufacturing in terms of materials and processes,more systematic engineering research on device reliability is also required.Due to the diversity of the structure of the laser chip and the inconsistency of the standards of the production units,there is no unified standard for the reliability evaluation of semiconductor lasers at home and abroad.Therefore,taking the 808nm semiconductor laser as an example,it is important to conduct high-power semiconductor laser reliability research and device failure analysis Academic value and application value.This paper studies the reliability of GaAs-based 808nm high-power semiconductor lasers.The main contents and research results are as follows:First,the effect of temperature stress and current stress on the photoelectric characteristics of the COS package 808nm semiconductor laser single tube is studied.When the operating current is constant,the heat sink temperature increases from 10℃ to 80℃,the laser threshold current increases,the operating voltage decreases,the slope efficiency decreases,the output power decreases from 10.51 W to 7.36W,and the maximum electro-optical conversion efficiency increases from 57.63%Reduced to 42.71%,the wavelength drift coefficient is about 0.28nm/℃.When the heat sink temperature is constant at 25℃ and the operating current is increased from 10A to 14A,the output power of the 808nm semiconductor laser is increased from 10.2W to 14.48W,the maximum electro-optical conversion efficiency is reduced from 56.78%to 55.9%,and the output wavelength is red-shifted from 807.85nm to 809.16nm.According to the analysis,under different temperature stress and current stress,the internal carrier leakage and internal loss of the laser will increase,the internal quantum efficicncy will decrease,the generated waste heat will increase,the forbidden band width will become smaller,and the lasing wavelength will be red-shifted.Second,70 COS single-tube 808nm semiconductor lasers were selected for constant stress accelerated life test.The temperature(heat sink temperature 35℃,45℃,55℃,65℃)accelerated stress experiment,using the power attenuation to 80%of the initial value as the basis for the failure judgment of the semiconductor laser,using the Arrhenius acceleration model to launch at 25℃,The life under 10Ais about 56000h.In the current(aging current 10A,12A,14A)accelerated stress experiment,using the inverse power rate acceleration model,the laser life is about 56772h.The results of the two stress accelerated aging tests are in good agreement.Third,the failure phenomenon statistics and failure mode analysis were conducted for the semiconductor lasers that failed in the test and aging test.The analysis found that the laser performance degradation and device failure mainly come from four reasons:cavity surface degradation,body degradation,ohmic contact degradation and packaging degradation.The cavity surface degradation is mainly due to the long-term laser irradiation of the cavity surface coating at the active area during the aging process of the device at constant temperature and constant current.Its performance is degraded,the protection of the cavity surface material is weakened,and defects are introduced.Non-radiative recombination at the defect causes heat accumulation and the temperature of the light emitting cavity surface increases.The degraded SiN/SiO2 cavity surface coating cannot protect the quantum well active area.The light emitting cavity surface is destroyed by the heat accumulated inside the chip and melts into a The convex curved surface will eventually cause cavity catastrophe damage(COMD);the degradation in the body is mainly due to the continuous proliferation of crystal defects of the material during the working period,forming active area dark line defects(DLDs). |
