| In recent years,with the development of GaN epitaxy technology,GaN-based blue semiconductor lasers have gradually entered the field of vision,its single tube power has been increased from 5m W to the present 6W,to meet the needs of industrial productio.Blue semiconductor lasers are widely used in data storage,laser additive manufacturing,laser display,submarine communication,biomedicine,optical communication,laser weapons,civil and military fields.With the power of blue semiconductor lasers increases,the cooling capacity and reliability of blue semiconductor lasers need to be improved.Therefore,The research on the reliability of high power blue semiconductor laser can expand its application market.In this paper,the failure mechanism,temperature distribution and accelerated aging of high power blue semiconductor lasers were analyzed by means of simulation and experiment.The main research results are as follows :1.The fault tree research of high power GaN based LD was carried out,and the influence of various applied conditions on the laser was summarized.Based on the principle and manufacturing process of GaN-based LD,the failure analysis of LD in different packaging forms was carried out to explore its failure mechanism,and four failure mechanisms of GaNbased LD were pointed out: active region defect,electrode degradation,cavity surface degradation and welding degradation.2.The thermal characteristics of high-power GaN-based LD was studied,and the thermal resistance of GaN-based LD was determined as 7.73K/W by optimized wavelength shift method.Combined with the basic theory of thermal transmission of GaN-based LD,the temperature distribution of GaN-based LD under different packaging structures was simulated by finite element analysis software ANSYS.Finally,the thermal sink structure of LD was optimized to reduce the maximum temperature in the active region of LD.The shell temperature of high-power gan-based LD was measured by infrared thermal imaging technology,and compared with the simulation results.3.According to the degradation law of high-power gan-based LD,a physical model of reliability degradation was established,and a high-current accelerated aging test was carried out to study the optical characteristics and low-frequency electrical noise of GaN based LD before and after aging.The linear regression equation of power degradation was established by using the least square method,and the normal working life and activation energy of GaN base LD were deduced according to Arrhenius formula. |
