Study On Damage Effect And Mechanism Of High Electromagnetic Pulse On Common Source Low Noise Amplifier

With the rapid development of microwave source technology and the continuous improvement of the integration of semiconductor integrated circuits,the electromagnetic sensitivity threshold of electronic equipment is decreasing increasingly,and the service conditions are becoming more and more strict.Therefore,higher requirements are put forward for the reliability of electronic system in complex electromagnetic environment.High electromagnetic pulse(HPM)can generate huge energy instantly and enter the electronic system through a variety of coupling modes,which is a major threat to the reliability of integrated circuits.As a typical representative of high electromagnetic pulse,high-power microwave has the characteristics of high center frequency,short pulse width and high peak power.It is easy to be coupled to the fore-end of radio receiver,resulting in the damage of core components such as low-noise amplifier,which leads to the dysfunction or even failure of the whole receiver system.Therefore,it has attracted extensive attention in the field of military and civil electronic communication.GaAs PHEMT has the advantages of high frequency,high speed and low noise.It is the preferred device for the circuit design of millimeter wave band low noise amplifier at present.In this paper,the common source low noise amplifier is taken as the research object,and the simulation circuit of GaAs based PHEMT low noise amplifier(LNA)is constructed for the first time by using sentaurus TCAD simulation software.By analyzing the relationship between the internal physical parameters of PHEMT device and the simulation time under the action of high-power microwave,the damage effect and mechanism of high electromagnetic pulse on LNA circuit are studied,and the following research results are obtained.Firstly,5 GHz HPM signal is injected into the circuit model,and the damage effect of low noise amplifier circuit under the action of C-band HPM is obtained.The results show that with the periodic change of the injected signal,the internal peak temperature curve of PHEMT device will periodically "increase decrease",and the peak region of current density and electric field intensity will move in each signal change cycle,resulting in the transfer of device hot spots.Finally,under the action of the external circuit,the PHEMT drain terminal continuously generates current,Joule heat accumulation,and takes the lead in reaching the burning temperature of the material.Therefore,the burning position of the device appears on the drain side below the gate.Secondly,by changing the injection signal parameters and the external resistance of PHEMT device port,the influence of external conditions on the process of circuit damage is studied.The results show that the increase of signal amplitude leads to the increase of energy coupled into PHEMT at the same time,which speeds up the damage process of the circuit.The increase of signal frequency reduces the time of heat accumulation in PHEMT,which slows down the damage process of the circuit.With the increase of the pulse width of the injection signal,the power threshold required for PHEMT damage decreases and the energy threshold increases.In addition,increasing the external resistance of the port will weaken the energy transmitted into the PHEMT,resulting in the increase of circuit damage time,and increasing the external resistance of the source has a better effect on delaying the damage process than increasing the external resistance of the drain.Finally,the C-band HPM injection experiment is carried out on the circuit sample of twostage cascaded GaAs PHEMT low noise amplifier,and the failure analysis of the injected experimental sample is carried out by using the detection instrument,and the HPM damage mechanism of the experimental sample is obtained.Through the experiment,it is found that the damage of LNA circuit sample is caused by the overheating and burning of GaAs PHEMT of the first stage amplifier under the action of HPM,and the drain under the gate is the vulnerable area of HPM,which verifies the correctness of the simulation modeling.In practical application,the reinforcement design can be focused on the area below the transistor gate of the first stage amplifier.Starting from the common source low noise amplifier circuit,by building the simulation circuit and changing the external conditions of the circuit,this paper studies the HPM damage mechanism and law of electronic equipment,which has a certain theoretical guiding significance for the circuit level anti electromagnetic pulse reinforcement design.