Low Power Consumption And High Energy Efficiency Power Management System For IoT SoC Chips

Through various wireless communication networks,the Internet of Things(Io T,Internet of Things)can achieve the interconnection between massive end devices.With the continuous development of Io T technology and the continuous miniaturization of Io T devices,Io T systems are increasingly moving towards low power consumption.Focusing on this situation,this paper studies a low-power and high-efficiency power management module that can be applied to Io T systems.The research content and results are as follows:1.As a preliminary feasibility study,this paper studies and designs a So C power management chip with conventional power consumption and high energy efficiency.High energy efficiency is manifested in high efficiency,multiple voltage domains,and fast startup: buck part and boost part.(1)The step-down part adopts the architecture of DC-DC and LDO cascade to meet the performance requirements of the load for low noise and high efficiency of the power system at the same time.Among them,the DC-DC part adopts the PWMPSM dual-mode control method to achieve wide load and high efficiency at the same time,and uses the synchronous phase generation technology to solve the problem of dual-mode switching;the LDO part adopts a structure without off-chip capacitors to achieve The full integration of the chip,and the use of transient response enhancement technology to solve the problem of output voltage undershoot and overshoot without off-chip capacitors.(2)In response to the problem of slow startup of low-voltage input,the boost part adds a fast startup module and an auxiliary startup module on the basis of the traditional inductive Boost architecture,which shortens the startup time to 1/8 of the original.The test results show that the input voltage of the dual-mode control buck converter is 3.3V,the output voltage is 1.4V,the load range is 100?A?200m A,and the highest efficiency in the full load range of the system is 92%;the transient response time of the transient enhanced LDO is from 928 ns.It is improved to 295ns;the input voltage of the fast low-voltage start-up boost converter is 0.5V,the output voltage is 1.78?1.95 V,the efficiency is 88.7% when the load current is 100?A,and the start-up time is only 12.26 ms.2.On the basis of the above research,this paper researches and designs a lowpower power supply chip that obtains energy through radio frequency.The main innovations are:(1)RF-DC module power supply instead of battery power supplyThe system supplies power to other circuits by collecting weak RF signals and converting them into DC energy.The designed threshold voltage self-compensating rectifier and dynamic substrate and gate control charge pump can effectively optimize the system conversion efficiency and improve sensitivity.(2)LDOs with different bias structuresAdaptive Biased Very Low Quiescent Power LDO(ALSP?LDO)uses adaptive biasing technology to reduce quiescent current to 53 n A,and push-pull amplifier based low power fast transient response LDO(Push-pull?LDO)uses zero quiescent power push-pull Amplifier and error amplifier co-enhancement technology achieves fast transient response(23.4ns)and low quiescent current(10n A).(3)DC-DC based on charge pumpThe low-power DC-DC module adopts the charge pump structure instead of the inductive Boost structure,and uses the dynamic substrate and gate to control the charge pump circuit to increase the output voltage,thereby reducing the number of cascaded stages,ultimately improving the efficiency of the system and reducing the circuit cost.power consumption.The post-simulation results show that the RF-DC input power range is-19?3d Bm,the input frequency is 433 MHz,and the output voltage is 1.65?1.95 V.When the input power is-19 d Bm,the RF-DC efficiency reaches 17.8%,and when the input power is3 d Bm,the RF-DC efficiency reaches 34%.The quiescent current of ALSP?LDO is53 n A;the quiescent current range of Push-pull?LDO module is 500n?2m A,the transient response time of load jumping from 2m A to 500 n A is only 23.4ns,and the quiescent current is as low as 10 n A.