Programmable Square-cylinder Gate-controlled Floating Gate With Electrostatic Field-effect Transistor

Since the invention of FET,it has attracted wide attention.With the development of technology and the progress of science and technology,the application in life is becoming more and more extensive,and people's demand for it is becoming higher and higher.With the development of Moore's law,the traditional field effect transistor will lead to serious channel effect when the size is reduced.Therefore,various new FETs have attracted more and more attention.This paper presents a programmable square tube gate-controlled floating gate electrostatic field-effect transistor with tunneling mechanism.The difference is that the sub-threshold swing can be less than 60 m V/dec.at room temperature compared with the traditional MOSFET.The Through the ring gate part of the square tube gate,a large band tunneling current is generated as the forward conduction current.using metal as the electrode to form a schottky junction with the silicon body.compared with the traditional schottky barrier field effect transistor,this structure greatly reduces the thermal excitation current and increases the proportion of tunneling current by setting a high schottky barrier.The structure of the floating gate is charged by using the ? gate above the silicon body,thus reducing a working electrode.The charged different floating gate charges can reduce the reverse leakage current well for both N and P types.As a result,lower subthreshold swing and lower reverse leakage current,higher forward on-current and higher switching current ratio can reduce the power consumption of the device,and the structure has source-drain symmetry interchangeability.It can be better compatible with MOSFET.The Silvaco TCAD software is used to simulate and analyze the structure of the device,the Dev Edit3 D in the software is used to design the 3D structure of the device,and the simulation is carried out through the Deck Build setting statement.The influence of different device parameters on performance is analyzed,and the structure and size of the device are optimized to improve the performance of the device.